DEFECT REACTIONS OF TRANSITION METALS IN SILICON STUDIED BY EPR AND HALL EFFECT.

Proceedings - The Electrochemical Society

Volumn 83-4, Issue , 1983, Pages 134-143

  Feichtinger, H ^a   Czaputa, R ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURE; CHROMIUM-BORON PAIR; CLUSTERS OF INTERSTITIAL TRANSITION METALS; HYPERFINE INTERACTIONS; SUBSTITUTIONAL TRANSITION ELEMENTS; SUPERSATURATED SOLID SOLUTIONS;

SEMICONDUCTING SILICON;

EID: 0020937364     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)