Barrier-Limited Transport in Semiconductor Devices

IEEE Transactions on Electron Devices

Volumn 30, Issue 12, 1983, Pages 1619-1623

  Frensley, William R ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

IONS - TRANSPORT PROPERTIES;

BARRIER LIMITED CURRENT TRANSPORT; DIFFUSION EQUATION; DIFFUSION THEORY; KINETIC THEORY; THERMIONIC EMISSION THEORY;

SEMICONDUCTOR DEVICES;

EID: 0020924006     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1983.21421     Document Type: Article

References (14)

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14. W. R. Frensley, “An analytic model for the barrier-limited mode of operation of the permeable base transistor,” this issue, pp. 1624-1628.