Latchup in cmos devices from heavy ions

IEEE Transactions on Nuclear Science

Volumn 30, Issue 6, 1983, Pages 4514-4519

  Soliman, K ^a   Nichols, D K ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COSMIC RAYS; INTEGRATED CIRCUITS - RADIATION EFFECTS;

CMOS INTEGRATED CIRCUITS;

SEMICONDUCTOR DEVICES, MOS;

EID: 0020915917     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1983.4333163     Document Type: Article

References (5)

1. Price, W.E., Nichols, D.K., and Soliman, K.A., IEEE Trans. Nuclear Science, NS-27, 1506, (December 1980).
2. Pickel, J.C., and Blanford, J. T., IEEE Trans. Nuclear Science, NS-27, 1006, (December 1980).
3. Dressendorfer, P.V., and Ochoa, A., IEEE Trans. Nuclear Science, NS-28, 4288, (December 1981).
4. Kolasinski, W.A., et al., IEEE Trans. Nuclear Science, NS-26, 5087, (December 1979).
5. Schroeder, J. E., Ochoa, A., and Dressendorfer, P. V., IEEE Trans. Nuclear Science, NS-27, 1735, (December 1980).