Dose enhancement effects in mosfet ic's exposed in typical 60Co facilities

IEEE Transactions on Nuclear Science

Volumn 30, Issue 6, 1983, Pages 4388-4393

  Kelly, J G ^a   Luera, T F ^a   Posey, L D ^a   Vehar, D W ^a   Brown, D B ^b   Dozier, C M ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOSIMETERS; GAMMA RAYS; SEMICONDUCTOR DEVICES, MOSFET - RADIATION EFFECTS; SEMICONDUCTOR MATERIALS - ION IMPLANTATION;

INTEGRATED CIRCUITS;

EID: 0020913639     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1983.4333143     Document Type: Article

References (8)

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3. D. B. Brown and C. M. Dozier, “Reducing Errors in Dosimetry Caused by Low Energy Components of Co-60 and Flash X-Ray Sources,” IEEE Trans. Nuc. Sci., NS-29, No. 6 , 1996 (1982).
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5. J. G. Garth, E. A. Burke, and S. Woolf, “The Role of Scattering Radiation in the Dosimetry of Small Device Structures,” IEEE Trans. Nuc. Sci, NS-27, No. 6, 1459 (1980).
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7. J. A. Wall and E. A. Burke, “Dose Distributions At and Near the Interface of Different Materials Exposed to Co 60 Gamma Radiation”, AFCRL-TR-004 (19741).
8. W. R. Dawes, Jr. and J. R. Schwank, “An IC Compatible Ionizing Radiation Detector,” IEEE Trans. Nuc. Sci., NS-28, No. 4152 (1981).