NEAR-CARRIER NOISE IN FET OSCILLATORS.

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 1983, Pages 282-284

  Pucel, R A ^a   Curtis, J ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA SUBSTRATES; EQUIVALENT CIRCUITS; FIELD EFFECT TRANSISTORS; FM NOISE; GALLIUM ARSENIDE;

OSCILLATORS, MICROWAVE;

EID: 0020902684     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.1983.1130885     Document Type: Conference Paper

References (4)

1. R. A. Pucel D. J. Masse R. Bera An Evaluation of GaAs FET Oscillators and Mixers for Integrated Front-End Application International Solid-State Circuits Conf. International Solid-State Circuits Conf. 1975-Feb.
2. M. Maeda K. Kimura H. Kodera Design and Performance of X-band Oscillators with GaAs Schottky-Gate Field Effect Transistors IEEE Trans. Microwave Theory and Techniques MTT-23 661 667 Aug. 1975
3. R. A. Pueel D. Masse R. Bera Performance of GaAs FET Mixers at X-band IEEE Trans. Microwave Theory and Techniques MTT-24 351 360 June 1976
4. J. A. Mullen Background Noise in Nonlinear Oscillators Proc. IRE 48 1467 1473 August 1960