COMPARISON OF LATCH-UP IN P- AND N-WELL CMOS CIRCUITS.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1983, Pages 159-163

  Takacs, D ^a   Harter, J ^a   Jacobs, E P ^a   Werner, C ^a   Schwabe, U ^a   Winnerl, J ^a   Lange, E ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR CURRENT GAIN; ENHANCED DIFFUSION OF BORON; LASER SCANNING MICROSCOPE MEASUREMENTS; LATCH-UP HARDNESS; TURN ON CHARACTERISTIC OF BIPOLAR TRANSISTOR;

SEMICONDUCTOR DEVICES, MOS;

EID: 0020879244     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iedm.1983.190466     Document Type: Conference Paper

References (0)