Basic limitations of isfet and silicon pressure transducers: noise theory, models and device scaling

Sensors and Actuators

Volumn 4, Issue C, 1983, Pages 427-438

  Barabash, P R ^a   Cobbold, R S C ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

PRESSURE TRANSDUCERS - MATHEMATICAL MODELS;

ELECTROLYTE/INSULATOR INTERPHASIAL REGION; INTRINSIC AND EXTRINSIC NOISE; ION-SENSITIVE FIELD-EFFECT TRANSISTORS (ISFETS);

TRANSISTORS, FIELD EFFECT;

EID: 0020847627     PISSN: 02506874     EISSN: None     Source Type: Journal    
DOI: 10.1016/0250-6874(83)85054-9     Document Type: Article

References (17)

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7. Development of a miniature pressure transducer for biomedical applications
8. A high-sensitivity integrated-circuit capacitive pressure transducer
9. A batch-fabricated silicon capacitive pressure transducer with low temperature sensitivity
10. Piezoresistive pressure transducer noise and arterial blood pressure measurement
11. Pressure sensitivity in anisotropically etched thindiaphragm pressure sensors
12. Silicon diffused-element piezoresistive diaphragms
13. 2Si structures on pH
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15. Site-binding model of the electrical double layer at the oxide/water interface
16. 2Si system: physical and theoretical aspects