GaAs FET power amplifier module with high efficiency

Electronics Letters

Volumn 19, Issue 24, 1983, Pages 1025-1026

  Chiba, K ^a   Kanmuri, N ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Field effect devices; Power amplifiers; Semiconductor devices and materials

Indexed keywords

TRANSISTORS, FIELD EFFECT;

AMPLIFIERS, POWER TYPE;

EID: 0020846476     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19830694     Document Type: Article

References (4)

1. SECHI, F. N.: ‘High efficiency microwave FET power amplifiers’, Microwave J., 1981, Nov., p. 59
2. RAAB, F.: ‘High efficiency amplification techniques’, IEEE Circ. & Syst. Newsletter, 1975, (3), pp. 3-11
3. SNIDER, D.: ‘A theoretical analysis and experimental confirmation of the optimally loaded and overdriven RF power amplifier’, IEEE Trans., 1976, ED-14, p. 851
4. WEMPLE, S. H., STEINBERGER, M. L., and SCHLOSSER, W. O.: ‘Relationship between power-added efficiency and gate-drain avalanche in GaAs MESFETs’, Electron. Lett., 1980, 12, pp. 459-460