Reverse-Bias Second Breakdown of High-Power Darlington Transistors

IEEE Transactions on Aerospace and Electronic Systems

Volumn AES-19, Issue 6, 1983, Pages 840-847

  Chen, D Y ^a   Lee, F C ^a   Blackburn, D L ^b   Berning, D W ^b  

^a VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SF;

TRANSISTORS;

EID: 0020843677     PISSN: 00189251     EISSN: None     Source Type: Journal    
DOI: 10.1109/TAES.1983.309396     Document Type: Article

References (7)

1. Hower, P.L., and Reddi, V.G.K. (1970) Avalanche injection and second breakdown in transistors. IEEE Transactions on Electron Devices, ED-I7 (1970), 320–335.
2. Blackburn, D.L., and Berning, D.W. (1978) Some effects of base current on transistor switching and reverse-bias second-breakdown. In Technical Digest of the 1978 International Electron Devices Meeting (Washington, D.C., Dec. 4-6, 1978), pp. 671–675.
3. Blackburn, D.L., and Berning, D.W. (1979) Reverse-bias second breakdown in power transistors. In Proceedings of the Electrical Overstress/Electrostatic Discharge Symposium (Denver, Colo., Sept. 24-27, 1979) pp. 116–121.
4. Chen, D.Y., and Jackson, B. (1980) Enhancement of the reverse bias second breakdown capability of high-voltage power transistors by emitter-open turn-off. Proceedings of the IEEE, 68 (1980).
5. Beatty, B.A., Krishna, S., and Adler, M.S. (1976) Second breakdown in power transistors due to avalanche injection. IEEE Transactions on Electron Devices, ED-23 (1976), 851–857.
6. Berning, D.W. (1979) Semiconductor measurement technology: A reverse-bias safe operating area transistor tester. NBS Special Publication 400–54. Washington, D.C.: National Bureau of Standards, Mar. 1979.
7. Blackburn, D.L., and Berning, D.W. (1980) An experimental study of reverse-bias second breakdown. In Technical Digest of the 1980 International Electron Devices Meeting (Washington, D.C., Dec. 8-10, 1980), pp. 297–301.