AES/XPS Thickness measurement of the native oxide on single crystal Si wafers

Materials Chemistry and Physics

Volumn 9, Issue 4, 1983, Pages 371-385

  Ceresa, E Mello ^a   Garbassi, F ^a  

^a Istituto Guido Donegani SpA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

SPECTROSCOPY, AUGER ELECTRON - APPLICATIONS; SPECTROSCOPY, X-RAY - APPLICATIONS;

SEMICONDUCTING SILICON;

EID: 0020833657     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/0254-0584(83)90013-5     Document Type: Article

References (18)

1. A study of the initial oxidation of polycrystalline Si using surface analysis techniques
2. Intensity analysis of XPS spectra to determine oxide uniformity: Application to SiO2/Si interfaces