Properties of Thermal Oxides Grown on Phosphorus In Situ Doped Polysilicon

Journal of the Electrochemical Society

Volumn 130, Issue 8, 1983, Pages 1735-1740

  Kinsbron, E ^b   Alspector, J ^b   Heimann, P A ^b  

^a INTEL CORPORATION   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOS;

POLYSILICON;

PHOSPHORUS;

EID: 0020799958     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2120072     Document Type: Article

References (26)

1. V. L. Rideout, IEEE Trans. Electron Devices ed-26, 839 (1979).
2. S. Sze, “Physics of Semiconductor Devices,” 2nd ed., p. 501, John Wiley & Sons, New York (1981).
3. T. I. Kamins and E. L. Mackenna, Metall. Trans., 2, 2242 (1971).
4. H. Sunami, Journal of the Electrochemical Society, 125, 892 (1978).
5. E. A. Irene, E. Tierney, and D. W. Dong, Journal of the Electrochemical Society, 127, 705 (1980).
6. D. J. DiMaria and D. R. Kerr, Appl. Phys. Lett., 27, 505 (1975).
7. R. M. Anderson and D. R. Kerr, J. Appl. Phys., 48, 4834 (1977).
8. S. A. Abbas, C. A. Barile, and R. C. Dockerty, Abstract 327, p. 842, The Electrochemical Society Extended Abstracts, Vol. 76–2, Las Vegas, NV, Oct. 17–22, 1976.
9. H. R. Huff, R. D. Halverson, T. L. Chiu, and D. Guterman, Journal of the Electrochemical Society, 127, 2482 (1980).
10. G. Yaron and L. D. Hess, Appl. Phys. Lett., 36, 284 (1980).
11. H. Sunami, M. Koyanagi, and K. Hashimoto, Journal of the Electrochemical Society, 127, 2499 (1980).
12. T. W. Hickmott and R. D. Isaac, J. Appl. Phys., 52, 3464 (1981).
13. J. Murota, E. Arai, and K. Kudo, Journal of the Electrochemical Society, 127, 1188 (1980).
14. M. Sternheim, Private communication.
15. G. Smolinsky, D. N. K. Wang, and D. Maydan, Abstract 281, p. 686, The Electrochemical Society Extended Abstracts, Vol. 81–2, Denver, CO, Oct. 11-16, 1981.
16. P. A. Heimann, S. P. Murarka, and T. T. Sheng, Submitted to the J. of Appl. Phys.
17. C. Hu, Y. Shum, T. Klein, and E. Lucero, Appl. Phys. Lett., 35, 189 (1979).
18. E. Kinsbron, M. Sternheim, S. Vaidya, and T. T. Sheng, To be published.
19. T. T. Sheng and R. B. Marcus, Journal of the Electrochemical Society, 127, 737 (1980).
20. S. P. Murarka, Private communication.
21. R. B. Marcus, T. T. Sheng, and P. Lin, Submitted to Journal of the Electrochemical Society.
22. B. K. Pidley, J. Appl. Phys, 46, 998 (1975).
23. J. Alspector, M. Stemheim, E. Kinsbron, R. M. Levin, P. A. Heimann, and D. V. Speeney, Private communication.
24. H. S. Lee and C. H. Feng, Appl. Phys. Lett., 37, 1080 (1980).
25. M. Itsumi, J. Appl. Phys., 52, 3491 (1981).
26. M. Lenzlinger and E. H. Snow, J. Appl. Phys, 40, 278 (1969).