A CMOS Magnetic Field Sensor

IEEE Journal of Solid-State Circuits

Volumn 18, Issue 4, 1983, Pages 426-428

  Popović, Radivoje S ^a   Baltes, Heinrich P ^a  

^a Landis and Gyr Communications Corp   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS;

SENSORS;

EID: 0020795915     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/JSSC.1983.1051967     Document Type: Article

References (7)

1. R. C. Gallagher and W. S. Corak “A metal-oxide-semiconductor (MOS) Hall element,” Solid-State Electronics, vol. 9, pp. 571-580, 1966.
2. S. Omura, “Magnetic sensor by CMOS technology,” Int. Rep. HT604, AFIF, Eidg. Techn. Hochschule Zürich, Switzerland, Aug. 1982.
3. P. W. Fry and S. J. Hocy, “A silicon MOS magnetic field transducer of high sensitivity,” IEEE Trans. Electron Devices, vol. ED-16, pp. 35-39, 1969.
4. J. E. L. Hollis, “Microelectronic magnetic transducers,” Measurement Contr., vol. 6, pp. 38-40. 1973.
5. W. N. Carr and S. T. Hong, “The MAGFET: A new Integrated circuit building block,” in SWIEECD Rec. Tech. Papers, 22nd Annu. Southwestern IEEE Conf. Exhibition, Dallas, TX, 1970, pp. 166-170.
6. P. R. Cray, “Basic MOS operational amplifier design–An overview,” in Analog MOS Integrated Circuits, P. R. Gray, D. A. Hodges, and R. W. Brodersen, Eds. New York: IEEE Press, pp. 28-50, 1980.
7. B. Gerber and F. Leuenberger, “Fabrication en petite quantite de circuits digitaux et analogiques en technologic CMOS,” in Proc. 56th Congres SSC, Neuchâtel, Switzerland, Oct. 23-24, 1981.