NUCLEATION AND STRAIN RELAXATION AT THE InAs/GaAs(100) HETEROJUNCTION.

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 1, Issue 3, 1983, Pages 688-695

  Schaffer, W J ^a   Lind, M D ^a   Kowalczyk, S P ^a   Grant, R W ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

INDIUM ARSENIDE;

SEMICONDUCTOR DEVICES;

EID: 0020781847     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582579     Document Type: Conference Paper

References (26)