Analysis of the Channel Inversion Layer Capacitance in the Very Thin-Gate IGFET

IEEE Electron Device Letters

Volumn 4, Issue 7, 1983, Pages 236-239

  Oh, S Y ^a   Choi, S G ^a   Sodini, C G ^a   Moll, J L ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORKS - EQUIVALENT CIRCUITS;

CHANNEL INVERSION LAYER; GATE CAPACITANCE; THIN GATE IGFET;

TRANSISTORS, FIELD EFFECT;

EID: 0020781816     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1983.25717     Document Type: Article

References (11)

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