Optimizing Carrier Lifetime Profile for Improved Trade-off Between Turn-off Time and Forward Drop

IEEE Transactions on Electron Devices

Volumn 30, Issue 7, 1983, Pages 782-790

  Temple, Victor A K ^a   Holroyd, Forrest W ^a  

^a GENERAL ELECTRIC COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DIODES; THYRISTORS;

SEMICONDUCTOR MATERIALS;

EID: 0020781110     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1983.21210     Document Type: Article

References (12)

1. J. M. Faifield and B. V. Gokhale, “Gold as a recombination center in silicon,” Solid State Electron., vol. 8, p. 685, 1965.
2. K. S. Tarneja and J. E. Johnson, “Tailoring the recovered charge in power diodes using 2 MeV electron irradiation,” presented at Electrochemical Soc. Meet., paper 261 RNP, 1975.
3. B.J. Baliga and E. Sun, “Lifetime control in power rectifiers using gold, platinum, and electron irradiation,” in IEDM Tech. Dig., p. 495, 1978.
4. J. L. Brown, U.S. patent no. 3877997.
5. A. Jaecklin et al., U.S. patent no. 3943549.
6. Gentry et al., General Electric SCR Manual, 5th ed., p. 124.
7. A. Porst, “Reverse transient behavior of power rectifiers,” in Proc. IEEE IAS Meet. (Pittsburgh, PA), 1974.
8. D. E. Houston, S. Krishna, and E. D. Wolley, “Study of charge dynamics in high speed power devices using free carrier absorption measurements,” in IEDM Tech. Dig., p. 504, 1976.
9. M. S. Adler and V.A.K. Temple, “Accurate calculations of the forward drop of power rectifiers and thyristors,” in IEDM Tech. Dig., p. 499, 1976.
10. “Dynamics of the thyristor turn-on process,” in IEDM Tech. Dig., 1977.
11. A. Herlet, “The forward characteristics of silicon power rectifiers at high current densities,” Solid State Electron., vol. 11, p. 717, 1968.
12. A. Blicher, Thyristor Physics. New York: Springer, 1976, pp. 88-97.