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Photoelastic waveguides and their effect on stripe-geometry GaAs/Ga1-xAl x As lasers
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Strain-induced optical waveguiding in GaAs epitaxial layer at 1.15 μm
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Photoelastic optical directional couplers in epitaxial GaAs layers at 1.15 μm
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T. M. Benson, T. Murotani, P. N. Robson, and P. A. Houston, “Photoelastic optical directional couplers in epitaxial GaAs layers at 1.15 μm,” Proc. 1st Euro. Conf. Integ. Opt., United Kingdom, Sept. 1981. pp. 79-82.
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Photoelastic optical waveguiding in InP epitaxial layers
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Masked and selective thermal oxidation (MSTO) of GaAs-GaAlAs multilayer structure
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H. D. Liu, B. Zhang, D. H. Wang, and W. X. Chen, “Masked and selective thermal oxidation (MSTO) of GaAs-GaAlAs multilayer structure,” Appl. Phys. Lett., vol. 38, pp. 557-559, 1981.
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Generalized formula for curvature radius and stress caused by thermal strain in semiconductor multilayer structures
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to be published
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Z. C. Feng and H. D. Liu, “Generalized formula for curvature radius and stress caused by thermal strain in semiconductor multilayer structures,” J. Appl. Phys., to be published.
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The stresses and Photoelastic effects in GaAs-GaAlAs multilayer wafers with masked and selective thermal oxidation structure
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Acta Optica Sinica, to be published
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H. D. Liu, Z. C. Feng, and Z. Z. Guo, “The stresses and Photoelastic effects in GaAs-GaAlAs multilayer wafers with masked and selective thermal oxidation structure,” Acta Optica Sinica, to be published.
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Liu, H.D.1
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Lloyd's mirror interference in a medium-A new method for determining photoelastic index variation
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Behavior of threshold current and polarization of stimulated emission of GaAs injection lasers under uniaxial stress
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The effects of strain on electromagnetic modes of anisotropic dielectric waveguides at p-n junction
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Observations of self-focusing in stripe geometry Semicondductor lasers and development of a comprehensive model of their operation
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P. A. Kirkby, A. R. Goodwin, G.H.B. Thompson, and P. R. Selway, “Observations of self-focusing in stripe geometry Semiconductor lasers and development of a comprehensive model of their operation,” IEEE J. Quantum Electron., vol. QE-13, pp. 705-709, 1977.
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Piezo-electroreflectance in Ge, GaAs, and Si
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