Collection of Charge From Alpha-Particle Tracks in Silicon Devices

IEEE Transactions on Electron Devices

Volumn 30, Issue 6, 1983, Pages 686-693

  Hsieh, Chang Ming ^a   Murley, Philip C ^a   O'brien, Redmond R ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON - CHARGE CARRIERS;

SEMICONDUCTOR DEVICES;

EID: 0020765547     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1983.21190     Document Type: Article

References (11)

1. T. C. May and M. H. Woods, “Alpha-particle tracks in silicon and their effect on dynamic MOS RAM reliability,” IEEE Trans. Electron Devices, vol. ED-26, pp. 2-9, Jan. 1979.
2. D. S. Yaney, J. T. Nelson, and L. L. Vanskike, “Alpha-particle tracks in silicon and their effect on dynamic MOS RAM reliability,” IEEE Trans. Electron Devices, vol. ED-26, pp. 10-16, Jan. 1979.
3. S. Kirkpatrick, “Modeling diffusion and collection of charge from ionizing radiation in silicon devices,” IEEE Trans. Electron Devices, vol. ED-26, pp. 1742-1753, Nov. 1979.
4. C. M. Hsieh, P. C. Murley, and R. R. O'Brien, “A field-funneling effect on the collection of alpha-generated carriers in silicon devices,” IEEE Electron Devices Lett., vol. EDL-2, pp. 103-105, Apr. 1981.
5. C. M. Hsieh, P. C. Murley, and R. R. O'Brien, “Dynamics of charge collection from alpha-particle tracks in integrated circuits,” in Proc. 19th Annual Int. Reliability Phys. Symp., Orlando, FL, Apr. 7, 1981, pp. 38-42.
6. A. G. Chynoweth, “Semiconductor nuclear-particle detectors,” National Academy of Sciences Publication 871, 1961.
7. E. M. Buturla, P. E. Cottrell, B. M. Grossman, and K. A. Salsburg, “Finite-element analysis of semiconductor devices: the FIELDAY program,” IBM J. Res. Develop., vol. 25, no. 4, pp. 218-231, July 1981.
8. R. Klein, “Ionization resistant MOS structure,” U.S. Patent 4 247 862, Jan. 27, 1981.
9. A. Tasch, P. K. Chatterjee, H. S. Fu, and T. C. Holloway, “The Hi-C RAM cell concept,” IEEE Trans. Electron Devices, vol. ED-25, no. 1, pp. 33-41, Jan. 1978.
10. M. R. Wordeman, R. H. Dennard, and G. A. Sai-Halasz, “A buried n-grid for protection against radiation-induced charge collection in electronic circuits,” in IEDM Tech. Dig., pp. 40-43, Dec. 1981.
11. R. R. O'Brien, “Calculation of the effect of substrate modifications on the collection of ionization generated excess carriers in silicon,” to be published.