Experimental Determination of Impact Ionization Coefficients in (100) GaAs

IEEE Electron Device Letters

Volumn 4, Issue 6, 1983, Pages 181-185

  Bulman, G E ^a   Robbins, V M ^a   Brennan, K F ^a   Hess, K ^a   Stillman, G E ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS - ANALYSIS; ELECTRONS - ABSORPTION; NOISE, SPURIOUS SIGNAL - MEASUREMENTS; SEMICONDUCTING GALLIUM ARSENIDE - ION IMPLANTATION;

P-N JUNCTION DEVICES; PHOTOCURRENT MULTIPLICATION MEASUREMENTS; ROOM TEMPERATURE ELECTRON IMPACTIONIZATION;

SEMICONDUCTOR DEVICES;

EID: 0020761529     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1983.25697     Document Type: Article

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