Low temperature aluminum oxide deposition using trimethylaluminum

Journal of Electronic Materials

Volumn 12, Issue 3, 1983, Pages 587-601

  Ehle, R S ^a   Baliga, B J ^a   Katz, W ^a  

^a GENERAL ELECTRIC COMPANY   (United States)

Author keywords

aluminum oxide; chemical vapor deposition; low temperature.

Indexed keywords

SEMICONDUCTOR DEVICES - MATERIALS;

FILMS;

EID: 0020749720     PISSN: 03615235     EISSN: 1543186X     Source Type: Journal    
DOI: 10.1007/BF02650866     Document Type: Article

References (11)

1. Properties of Aluminum Oxide Films Obtained from Nitrous Oxide and Aluminum Trimethyl
2. Deposition and Properties of Aluminum Oxide Obtained by Pyrolytic Decomposition of an Aluminum Alkoxide
3. Chemical Vapor Deposition of Silicate Glasses for Use with Silicon Devices