Plasma Etch Anisotropy—Theory and Some Verifying Experiments Relating Ion Transport, Ion Energy, and Etch Profiles

Journal of the Electrochemical Society

Volumn 130, Issue 5, 1983, Pages 1144-1152

  Zarowin, C B ^a  

^a PERKINELMER INC   (United States)

Author keywords

anisotropic etching; ion transport; ion assisted chemistry; plasma electric fields

Indexed keywords

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0020749174     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2119905     Document Type: Article

References (9)

1. H., Mader, Paper 104 presented at The Electrochemical Society Meeting, St. Louis, MO, May 11–16, 1980.
2. C. B. Zarowin et al., Paper 264 presented at The Electrochemical Society Meeting. Denver, CO, Oct. 11–16, 1981.
3. A. R. Reinberg et al., Paper 275 presented at The Electrochemical Society Meeting, Denver, CO, Oct. 11–16, 1981.
4. R. H. Bruce et al., “High Rate Anisotropic Etching,” Tech. Digest, IEDM, Dec. 1981.
5. T. Mizutani et al., “A New Aluminum Plasma Etching Technology,” Tech. Digest, IEDM, Dec. 1981.
6. C. B. Zarowin and J. Dalle Ave, Paper 154 presented at The Electrochemical Society Meeting, San Francisco, CA, May 8–13, 1983.
7. C. B. Zarowin, Thin Solid Films, 85, 33 (1981).
8. V. E. Golant et al., in “Fundamentals of Plasma Physics,” S. C. Brown, Editor, pp. 48–51, 66, 150–152, John Wiley and Sons, New York (1979).
9. H. R. Koenig and L. I. Maissel, IBM J. Res. Dev., 14, 168 (1970).