An Efficient Numerical Algorithm for Simulation of MOS Capacitance

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 2, Issue 2, 1983, Pages 111-116

  Jaeger, Richard C ^a   Gaensslen, Fritz H ^b   Diehl, Sherra E ^a  

^a AUBURN UNIVERSITY   (United States)

^b IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER PROGRAMMING - ALGORITHMS;

CAPACITANCE-VOLTAGE (C-V) CHARACTERISTICS; EQUILIBRIUM CAPACITANCE; NUMERICAL EVALUATION;

SEMICONDUCTOR DEVICES, MOS;

EID: 0020737810     PISSN: 02780070     EISSN: 19374151     Source Type: Journal    
DOI: 10.1109/TCAD.1983.1270027     Document Type: Article

References (16)

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2. A. S. Grove, B. E. Deal, E. H. Snow, and C. T. Sah, “Investigations of thermally oxidized surfaces using metal-oxide-semiconductor structures,” Solid-State Electron., vol. 8, pp. 145-163, Feb. 1965.
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