INVESTIGATION OF THE INFLUENCE OF THE AUGER RECOMBINATION PROCESS ON THE CURRENT-VOLTAGE CHARACTERISTICS OF MULTILAYER SILICON STRUCTURES.

Soviet physics. Semiconductors

Volumn 17, Issue 3, 1983, Pages 293-296

  Zubrilov, A S ^a   Kuz'min, V A ^a   Mnatsakanov, T T ^a   Pomortseva, L I ^a   Shuman, V B ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON;

EID: 0020724186     PISSN: 00385700     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)