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Journal of Applied Physics

Volumn 54, Issue 3, 1983, Pages 1423-1428

Characteristics of TiN gate metal-oxide-semiconductor field effect transistors

(3) Wittmer, M a Noser, J R a Melchior, H a

a ETH ZURICH (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOS;

TRANSISTORS, FIELD EFFECT;

EID: 0020720741 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.332167 Document Type: Article

Times cited : (29)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.