Temperature Stabilization of GaAs MESFET Oscillators Using Dielectric Resonators

IEEE Transactions on Microwave Theory and Techniques

Volumn 31, Issue 3, 1983, Pages 312-314

  Tsironis, Christos ^a   Pauker, Vlad ^a  

^a PHILIPS RESEARCH LABORATORIES   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; SEMICONDUCTOR DEVICES; TRANSISTORS, FIELD EFFECT - APPLICATIONS;

DIELECTRIC RESONATOR OSCILLATORS;

OSCILLATORS, MICROWAVE;

EID: 0020717310     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/TMTT.1983.1131484     Document Type: Article

References (4)

1. H. Abe, Y. Takayama, A. Higashisaka, and H. Takamizawa, “A highly stabilized low-noise GaAs FET, integrated oscillator with a dielectric resonator in the C band,” IEEE Trans. Microwave Theory Tech., vol MTT-26, pp. 156-162, 1978.
2. T. Makino and A. Hashima, “A highly stabilized MIC Gunn oscillator using a dielectric resonator,” IEEE Trans Microwave Theorv Tech., vol. MTT-27, pp 633-638, 1979.
3. Y. Komatsu, Y. Murakami, T. Yamaguchi, T. Otobe, and M. Hirabayashi, “A frequency-stabilized MIC oscillator using a newly developed dielectric resonator,” m IEEE MTT-S Symp. Dig., 1981, pp. 313-315.
4. F. Sechi and J. Brown, “ku-band FET oscillator,” in Proc. ISSCC, 1980, pp. 124-125.