SCOPUS 정보 검색 플랫폼

Journal of Physics and Chemistry of Solids

Volumn 44, Issue 5, 1983, Pages 365-378

A Semi-empirical tight-binding theory of the electronic structure of semiconductors†

(3) Vogl, P a Hjalmarson, Harold P b Dow, John D b

a UNIVERSITY OF GRAZ (Austria)

b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES;

SEMICONDUCTOR MATERIALS;

EID: 0020545505 PISSN: 00223697 EISSN: None Source Type: Journal
DOI: 10.1016/0022-3697(83)90064-1 Document Type: Article

Times cited : (1393)

References (51)

1
- 0000516608
- (1968) J. Appl. Phys. , vol.39 , pp. 4032
- Arthur¹

2
- 0002791888
- Film Deposition by Molecular-Beam Techniques
- (1971) Journal of Vacuum Science and Technology , vol.8 , pp. 531
- Cho¹

3
- 0346955939
- (1974) J. Crystal Growth , vol.27 , pp. 118
- Matthews¹ Blakeslee²

4
- 33744558557
- (1975) J. Crystal Growth , vol.29 , pp. 273
- Matthews¹ Blakeslee²

5
- 4143078533
- (1976) J. Crystal Growth , vol.32 , pp. 265
- Matthews¹ Blakeslee²

6
- 84926555698
- Superfine structures of semiconductors grown by molecular‐beam epitaxy
- (1976) C R C Critical Reviews in Solid State Sciences , vol.6 , pp. 195
- Esaki¹ Chang²

7
- 6144295836
- (1973) Phys. Rev. , vol.8 B , pp. 4487
- Harrison¹

8
- 0001670771
- (1974) Phys. Rev. , vol.10 B , pp. 1516
- Harrison¹ Ciraci²

9
- 0000711590
- (1975) Phys. Rev. , vol.11 B , pp. 3006
- Pantelides¹ Harrison²

10
- 0003464333
- Freeman, San Francisco
- (1980) Electronic Structure and the Properties of Solids
- Harrison¹

11
- 0001280889
- See, for example, The basic philosophy of this pseudo-Hamiltonian approach in a tight-binding basis is borrowed from the early k-space pseudopotential studies designed to produce the “smoothest” and most plane-wave-like pseudowavefunction.
- (1962) Phys. Rev. , vol.127 , pp. 276
- Austin¹ Heine² Sham³

12
- 0007127704
- (1980) Phys. Rev. , vol.22 B , pp. 1933
- Louie¹

13
- 0004742180
- (1975) J. Phys. , vol.8 C , pp. 2695
- Bullett¹

14
- 36149068468
- (1975) J. Phys. , vol.8 C , pp. 2707
- Bullett¹

15
- 77956928061
- H. Ehrenreich, F. Seitz, D. Turnbull, Academic Press, New York
- (1980) Solid State Physics , vol.35 , pp. 129
- Bullett¹

16
- 0003091620
- H. Ehrenreich, F. Seitz, D. Turnbull
- (1980) Solid State Physics , vol.35 , pp. 1
- Heine¹

17
- 0007997957
- (1978) Phys. Rev. , vol.17 B , pp. 2691
- Kane¹ Kane²

18
- 4244068539
- Ab initio self-consistent calculation of silicon electronic structure by means of Wannier functions
- (1979) Physical Review B , vol.19 B , pp. 2283
- Teiedor¹ Verges²

19
- 0002144796
- H. Ehrenreich, F. Seitz, D. Turnbull, Academic Press, New York
- (1970) Solid State Physic , vol.24 , pp. 38-248
- Cohen¹ Heine²

20
- 2442522754
- (1954) Phys. Rev. , vol.94 , pp. 1498
- Slater¹ Koster²

21
- 0001329364
- Fourier Expansion for the Electronic Energy Bands in Silicon and Germanium
- (1967) Physical Review , vol.160 , pp. 6491
- Dresselhaus¹ Dresselhaus²

22
- 0000141123
- (1976) Phys. Rev. , vol.13 B , pp. 750
- Pandey¹ Phillips²

23
- 0000236080
- (1979) Phys. Rev. , vol.19 B , pp. 6341
- Schulman¹ McGill²

24
- 0019056897
- (1980) J. Vac. Sci. Technol. , vol.17 , pp. 1028
- Daw¹ Smith²

25
- 0019054978
- (1980) J. Vac. Sci. Technol. , vol.17 , pp. 997
- Wang¹ Joannopoulos²

26
- 0016486474
- (1975) Phys. Stat. Solidi , vol.68 , pp. 405
- Chadi¹ Cohen²

27
- 33744685518
- (1976) Phys. Rev. , vol.14 , pp. 556
- Chelikowsky¹ Cohen²

28
- 16444378435
- On the Non-Orthogonality Problem Connected with the Use of Atomic Wave Functions in the Theory of Molecules and Crystals
- −rbb7prime;).By using Löwdin Orbitals instead of atomic orbitals, we obtain a secular equation of the form det (ϵ − H) = 0 instead of one with the troublesome overlaps: det (ϵS − H) = 0
- (1950) The Journal of Chemical Physics , vol.18 , pp. 365
- Löwdin¹

29
- 0041128202
- University of Illinois
- (1979) Ph.D. Thesis
- Hjalmarson¹

30
- 0343732881
- (1980) Phys. Rev. Letters , vol.44 , pp. 810
- Hjalmarson¹ Vogl² Wolford³ Dow⁴

31
- 84916116966
- The eigenvalue equation for an energy level associated with a localized defect has significant, partially cancelling con tributions from states ± 10 eV from the fundamental band gap, as shown in Ref. [17]; thus an accurate knowledge of the density of states over a 20 eV range is needed.

32
- 0015481414
- On the Numerical Calculation of the Density of States and Related Properties
- To calculate the local density of states, we use a special points tetrahedral-volume method based on the ideas of, the FORTRAN program is listed in Ref. [16].
- (1972) Physica Status Solidi (b) , vol.54 , pp. 469
- Lehman¹ Taut²

33
- 77956906240
- [Seitz F. and Turnbull D. (Eds.), Academic Press, New York, (1955)].
- (1955) Solid. St. Phys. , vol.1 , pp. 127
- Ham¹

34
- 84996177526
- The model potential for positive ions
- (1965) Philosophical Magazine , vol.12 , pp. 529
- Abarenkov¹ Heine²

35
- 84996157099
- A new method for the electronic structure of metals
- (1964) Philosophical Magazine , vol.9 , pp. 451
- Heine¹ Abarenkov²

36
- 0001073506
- (1974) Phys. Rev. , vol.9 B , pp. 600
- Ley¹ Pollak² McFeely³ Kowalczyk⁴ Shirley⁵

37
- 84916116965
- Experiments have not been reported for these interfaces, but Ref. [3], p. 253, predicts a valence band discontinuity of about 2.0 eV for both of these heterojunctions.

38
- 25944480233
- (1981) Phys. Lett , vol.85 A , pp. 293
- Hjalmarson¹ Buttner² Dow³

39
- 0000580685
- (1981) Phys. Rev. , vol.24 B , pp. 6010
- Hjalmarson¹ Buttner² Dow³

40
- 84987094711
- (1980) Int. J. Quantum Chem., Quantum Chem. Symp. , vol.14 , pp. 607
- Allen¹ Hjalmarson² Vogl³ Wolford⁴ Sankey⁵ Dow⁶

41
- 0019059253
- (1980) J. Vac. Sci. Technol. , vol.17 , pp. 993
- Hjalmarson¹ Allen² Büttner³ Dow⁴

42
- 9444298212
- (1981) Surface Sci. , vol.110 , pp. L625
- Allen¹ Hjalmarson² Dow³

43
- 36749121614
- (1981) Appl. Phys. Lett. , vol.39 , pp. 975
- Allen¹ Buisson² Dow³

44
- 0343269702
- (1982) Phys. Rev. B , vol.25 , pp. 1423
- Allen¹ Dow²

45
- 49049138451
- Deep energy levels for defects at the AlAs (110) surface
- (1982) Applications of Surface Science , vol.11-12 , pp. 362
- Allen¹ Dow²

46
- 0019534366
- Surface defects and Fermi-level pinning in InP
- (1982) Journal of Vacuum Science and Technology , vol.20 , pp. 659
- Dow¹ Allen²

47
- 35949025842
- (1980) Phys. Rev. Letters , vol.45 , pp. 1656
- Sankey¹ Hjalmarson² Dow³ Wolford⁴ Streetman⁵

48
- 0010681525
- Average-energy-of-configuration Hartree-Fock results for the atoms helium to radon charlotte froese fischer
- (1972) Atomic Data and Nuclear Data Tables , vol.4 , pp. 301
- Fisher¹

49
- 0016267973
- see also
- (1974) Atomic Data and Nuclear Tables , vol.14 , pp. 177
- Clementi¹ Roetti²

50
- 0001536458
- Atomic Energy Levels
- 4th Edn., U.S. Government Printing Office, Washington, D.C
- (1949) National Bureau of Standards Circular 467
- Moore¹

51
- 35949032026
- For example, see
- (1977) Phys. Rev. , vol.16 B , pp. 5147
- Jennison¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.