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9
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K., Bethge, H., Baumarm, H., Jex, F., Rauch, Vieweg, Braunschweig
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Nuclear Physics Methods in Materials Research
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Wiehl, N.1
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Weber, E.3
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11
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84933702790
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E.R. Weber, N. Wiehl: To be published
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18
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84933702789
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T. Chang, A.H. Kahn: NBS Special Publication 260-259 (1978)
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28
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84933702786
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E.G. Sieverts: Phys. Status Solidi (1982, in press)
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49
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N.B., Urli, J.W., Corbett, Conf. Ser., 31, Inst. of Physics, Bristol, London
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Radiation Effects in Semiconductors 1976
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Mayer, H.J.1
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57
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J.H., Albany, Conf. Ser., 46, Inst. of Physics, Bristol, London
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Defects and Radiation Effects in Semiconductors 1978
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Seeger, A.1
Frank, W.2
Gösele, U.3
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58
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0343425051
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J., Narayan, T.Y., Tan, North-Holland, New York, Bristol
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Defects in Semiconductors
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Frank, W.1
Seeger, A.2
Gösele, U.3
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60
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0343140279
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J.H., Albany, Conf. Ser., 46, Inst. of Physics, Bristol, London
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(1979)
Defects and Radiation Effects in Semiconductors 1978
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Lee, Y.H.1
Kleinhenz, R.L.2
Corbett, J.W.3
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61
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84933702787
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Quenching experiments from 1250 °C using phosphorus doped silicon failed to detect by EPR Si-E centers (Ps+V), the dominant defect in irradiated n-Si. The detection limit was lower than 1011cm−3 [79]
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69
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0019025110
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Electron Paramagnetic Resonance of Gold in Silicon. I. Single Atoms; Strong Nuclear Quadrupole Effect
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(1980)
physica status solidi (b)
, vol.99 B
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Höhne, M.1
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71
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84933702788
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E.R. Weber, N. Wiehl, G. Borchardt, S.D. Brotherton: To be published
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80
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84933702783
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E.R. Weber: Unpublished
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91
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84933702785
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G.W. Ludwig, H.H. Woodbury: Proc. Intern. Conf. on Semicond. Physics, Prague (1960) p. 596
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96
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84933702780
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A. Zunger, U. Lindefelt: To be published
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98
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3342989192
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H.R., Huff, R.J., Kriegler, Y., Takeishi, The Electrochem. Soc., Pennington
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(1981)
Semiconductor Silicon 1981
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Graff, K.1
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106
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0003659399
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J.M., Poate, K.N., Tu, J.W., Mayer, Wiley, New York
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(1978)
Thin Films — Interdiffusion and Reactions
, pp. 359
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Tu, K.N.1
Mayer, J.W.2
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110
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84933702781
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For Si: Cu the validity of this assumption (i.e. γ1/2=1) has been proved [99], resulting only in a minor correction of ***a due to the introduction of γ1/2≠1
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118
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3342989192
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H.R., Huff, R.J., Kriegler, Y., Takeishi, The Electrochemical Society, Pennington
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(1981)
Semiconductor Silicon 1981
, pp. 344
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Stacy, W.T.1
Allison, D.F.2
Wu, T.-C.3
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130
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84933702754
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H. Conzelmann, K. Graff, E.R. Weber: To be published
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137
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84933702753
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Graff et al. [6] ascribe the Ev+0.21eV level to an (FeAl) acceptor and Ev+0.13 eV to the (FeAl) donor; however, as pointed out by Wünstel and Wagner [85] the lower level has to be due to some other complex and, in accordance with Feichtinger [131] the upper level corresponds to the (FeAl)0/+ donor, [97]
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