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Volumn 30, Issue 1, 1983, Pages 1-22

Transition metals in silicon

Author keywords

61.70 Wp; 71.55 Fr; 82.60 s

Indexed keywords

TRANSITION METALS;

EID: 0020543433     PISSN: 07217250     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/BF00617708     Document Type: Article
Times cited : (1049)

References (146)
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    • E.R. Weber, N. Wiehl: To be published
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    • T. Chang, A.H. Kahn: NBS Special Publication 260-259 (1978)
  • 28
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    • E.G. Sieverts: Phys. Status Solidi (1982, in press)
  • 61
    • 84933702787 scopus 로고    scopus 로고
    • Quenching experiments from 1250 °C using phosphorus doped silicon failed to detect by EPR Si-E centers (Ps+V), the dominant defect in irradiated n-Si. The detection limit was lower than 1011cm−3 [79]
  • 71
    • 84933702788 scopus 로고    scopus 로고
    • E.R. Weber, N. Wiehl, G. Borchardt, S.D. Brotherton: To be published
  • 80
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    • E.R. Weber: Unpublished
  • 91
    • 84933702785 scopus 로고    scopus 로고
    • G.W. Ludwig, H.H. Woodbury: Proc. Intern. Conf. on Semicond. Physics, Prague (1960) p. 596
  • 96
    • 84933702780 scopus 로고    scopus 로고
    • A. Zunger, U. Lindefelt: To be published
  • 110
    • 84933702781 scopus 로고    scopus 로고
    • For Si: Cu the validity of this assumption (i.e. γ1/2=1) has been proved [99], resulting only in a minor correction of ***a due to the introduction of γ1/2≠1
  • 130
    • 84933702754 scopus 로고    scopus 로고
    • H. Conzelmann, K. Graff, E.R. Weber: To be published
  • 137
    • 84933702753 scopus 로고    scopus 로고
    • Graff et al. [6] ascribe the Ev+0.21eV level to an (FeAl) acceptor and Ev+0.13 eV to the (FeAl) donor; however, as pointed out by Wünstel and Wagner [85] the lower level has to be due to some other complex and, in accordance with Feichtinger [131] the upper level corresponds to the (FeAl)0/+ donor, [97]


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.