Analysis of slow-wave phenomena in coplanar waveguide on a semiconductor substrate

Electronics Letters

Volumn 18, Issue 14, 1982, Pages 589-590

  Fukuoka, Y ^a   Itoh, T ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

Microwave techniques; Slowwave phenomena; Waveguides

Indexed keywords

SEMICONDUCTOR MATERIALS;

COPLANAR WAVEGUIDES;

WAVEGUIDES;

EID: 0020477520     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19820404     Document Type: Article

References (7)

1. HASEGAWA, H.: ‘Properties of microstrip line on Si-SiO2 system’, IEEE Trans., 1971, MTT-19, pp. 869-881
2. HUGHES, G. W.: ‘Microwave properties of nonlinear MIS and Schottky-barrier microstrip’, IEEE Trans., 1975, ED-22, pp. 945-956
3. HASEGAWA, H.: ‘MIS and Schottky slow-wave coplanar striplines on GaAs substrates’, Electron. Lett., 1977, 13, pp. 663-664
4. KENNIS, P.: ‘Rigorous analysis of planar MIS transmission lines’, IEEE Trans., 1981, 17, pp. 454-456
5. SCHLOSSER, W., and UNGER, H.: ‘Partially filled waveguides and surface waveguides of rectangular cross section’, in ‘Advances in microwaves Vol. V (Academic Press, New York and London, 1966)
6. KOWALSKI, G.: ‘Dispersion characteristics of shielded microstrips with finite thickness’, Archiv fur Electronik und Übertragungstechnik, 1971, 25, pp. 193-196
7. FUJIKI, Y.: ‘Higher-order modes in coplanar-type transmission lines’, Electron. & Commun. Jpn., 1975, 58-B, pp. 74-81