Random Errors in MOS Capacitors

IEEE Journal of Solid-State Circuits

Volumn 17, Issue 6, 1982, Pages 1070-1076

  Shyu, Jyn Bang ^a   Temes, Gabor C ^a   Yao, Kung ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOS;

MOS CAPACITORS;

CAPACITORS;

EID: 0020301923     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/JSSC.1982.1051862     Document Type: Article

References (8)

1. J. L. McCreary, “Matching properties, and voltage and temperature dependence of MOS capacitors,” IEEE J. Solid-State Circuits, vol. SC-16, pp. 608-616. Dec. 1981.
2. F. Krummenacher, “Evaluation de la dispersion de capacites integrees,” AGEN Mitteilungen, no. 29, pp. 41-46, Aug. 1980.
3. Y. S. Yee, L. M. Terman, and L. G. Heller, “A two-stage weighted capacitor network for D/A-A/D conversion,” IEEE J. Solid-State Circuits, vol. SC-14, pp. 778-781, Aug. 1979.
4. A. Papoulis, Probability, Random Variables, and Stochastic Processes. New York: McGraw-Hill, 1965.
5. I. M. Sobol, The Monte Carlo Method, Chicago, IL: University of Chicago Press, 1974.
6. H. Kahn “Multiple quadrature by Monte Carlo methods,” in Mathematical Methods for Digital Computers, A. Ralston and H. S.Wilf, Eds. New York: Wiley, 1960.
7. J. L. McCreary, Ph.D. dissertation, University of California, Berkeley, 1975.
8. personal communications.