RELIABILITY OF THIN SiO//2 FILMS SHOWING INTRINSIC DIELECTRIC INTEGRITY.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1982, Pages 46-49

  Hokari, Y ^a   Baba, T ^a   Kawamura, N ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC BREAKDOWN; ELECTRIC FIELD ACCELERATION FACTOR; INTRINSIC DIELECTRIC INTEGRITY; MOS CAPACITORS; TEMPERATURE ACCELERATION FACTOR; THIN SILICON DIOXIDE FILMS;

DIELECTRIC MATERIALS;

EID: 0020294333     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)