A comparison of radiation damage in transistors from cobalt-60 gamma rays and 2.2 MeV electrons

IEEE Transactions on Nuclear Science

Volumn 29, Issue 6, 1982, Pages 1970-1974

  Nichols, D K ^a   Price, W E ^a   Gauthier, M K ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; GAMMA RAYS;

TRANSISTORS, BIPOLAR;

EID: 0020293786     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1982.4336480     Document Type: Article

References (0)