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Volumn 29, Issue 6, 1982, Pages 1980-1984

Dose enhancement effects in semiconductor devices

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES;

EID: 0020288667     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1982.4336482     Document Type: Article
Times cited : (38)

References (30)
  • 2
    • 84938443617 scopus 로고    scopus 로고
    • Studies in Penetration of Charged Particles in Matter
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    • National Academy of Sciences
    • Berger, M.J.1    Seltzer, S.M.2
  • 3
    • 36149007336 scopus 로고
    • Theory of Electron Penetration
    • L.V. Spencer, “Theory of Electron Penetration”, Phys. Rev., 98,1597(1955).
    • (1955) Phys. Rev. , vol.98 , pp. 1597
    • Spencer, L.V.1
  • 4
    • 0006163373 scopus 로고
    • Tables of Energy Losses and Ranges of Electrons and Positrons
    • M.J. Berger and S.M. Seltzer, “Tables of Energy Losses and Ranges of Electrons and Positrons”, NBS SP-3012 (1964).
    • (1964) NBS , vol.SP-3012
    • Berger, M.J.1    Seltzer, S.M.2
  • 5
    • 84913468292 scopus 로고
    • Electron and Photon Transport Programs
    • M.J. Berger and S.M. Seltzer, “Electron and Photon Transport Programs”, NBS Reports 9836-9837 (1968).
    • (1968) NBS Reports , pp. 9836-9837
    • Berger, M.J.1    Seltzer, S.M.2
  • 6
  • 8
    • 0003604206 scopus 로고
    • Photon Cross Sections from 0.001 to 100 MeV for Elements 1 through 100
    • LASL Report LA-2753
    • E. Storm and H.I. Israel, “Photon Cross Sections from 0.001 to 100 MeV for Elements 1 through 100”, LASL Report LA-2753 (1967).
    • (1967)
    • Storm, E.1    Israel, H.I.2
  • 9
    • 0003509124 scopus 로고
    • Photon Cross Sections, Attenuation Coefficients, and Energy Absorbtion Coefficients from 10 KeV to 100 GeV
    • NSRDS-NBS29
    • J.H. Hubbell, “Photon Cross Sections, Attenuation Coefficients, and Energy Absorbtion Coefficients from 10 KeV to 100 GeV”, NSRDS-NBS 29 (1969).
    • (1969)
    • Hubbell, J.H.1
  • 13
    • 84938440958 scopus 로고
    • Monte Carlo Analysis of X ray and X ray Transition Zone Dose and Photo-Comption Current
    • ADA002343
    • W.L. Chadsey, “Monte Carlo Analysis of X ray and X ray Transition Zone Dose and Photo-Comption Current”, AFCRL Report TR-73-0572 (1973) (ADA002343).
    • (1973) AFCRL Report TR-73-0572
    • Chadsey, W.L.1
  • 16
    • 0019282440 scopus 로고
    • The Role of Scattering Radiation in the Dosimetry of Small Device Structures
    • Dec.
    • J.C. Garth, E.A. Burke, and S. Woolf, “The Role of Scattering Radiation in the Dosimetry of Small Device Structures”, IEEE Trans. Nuc. Sci., Vol. NS-27, No. 6., Dec. 1980, p. 1459.
    • (1980) IEEE Trans. Nuc. Sci. , vol.NS-27 , Issue.6 , pp. 1459
    • Garth, J.C.1    Burke, E.A.2    Woolf, S.3
  • 17
    • 84938166465 scopus 로고
    • Dose Gradient Effects on Semiconductors
    • ADB002055L
    • D.M. Long and D.H. Swant, “Dose Gradient Effects on Semiconductors”, AFCRL-TR-74-0283 (1974) (ADB002055L).
    • (1974) AFCRL-TR-74-0283
    • Long, D.M.1    Swant, D.H.2
  • 18
    • 84938443981 scopus 로고
    • Prediction of Dose Gradients and Their Effects on Semiconductors
    • AD893413L
    • D.M. Long, W.L. Chadsey, and R.V. Benedict, “Prediction of Dose Gradients and Their Effects on Semiconductors”, AFCRL-71-0584(1971) (AD893413L).
    • (1971) AFCRL-71-0584
    • Long, D.M.1    Chadsey, W.L.2    Benedict, R.V.3
  • 19
    • 0017244361 scopus 로고
    • An Algorithm for Energy Deposition at Interfaces
    • E.A. Burke and J.C. Garth, “An Algorithm for Energy Deposition at Interfaces”, IEEE Trans. Nuc. Sci., NS-23, No. 6, 1838. (1976).
    • (1976) IEEE Trans. Nuc. Sci. , vol.NS-23 , pp. 1838
    • Burke, E.A.1    Garth, J.C.2
  • 22
    • 84938155309 scopus 로고
    • Packaging Effects on Transistor Radiation Response
    • R.A. Berger and J.L. Azarewicz, “Packaging Effects on Transistor Radiation Response”, IEEE Trans. Nuc. Sci., NS-22, No. 6, 2586,(1975).
    • (1975) IEEE Trans. Nuc. Sci. , vol.NS-22 , Issue.6 , pp. 2586
    • Berger, R.A.1    Azarewicz, J.L.2
  • 23
    • 84938443981 scopus 로고
    • Prediction of Dose Gradients and Their Effects on Semiconductors
    • AD893413L
    • D.M. Long, W.L. Chadsey, and R.V. Benedict, “Prediction of Dose Gradients and Their Effects on Semiconductors”, AFCRL-71-0584(1971) (AD893413L)
    • (1971) AFCRL-71-0584
    • Long, D.M.1    Chadsey, W.L.2    Benedict, R.V.3
  • 26
    • 84938445226 scopus 로고
    • Techniques for Calculation of Dose due to X-rays
    • Race Street, Philadelphia, PA 19103
    • ASTM Standards Nos: E-665 and E-666, “Techniques for Calculation of Dose due to X-rays”, E-170, “Dosimetry Standard”, E-668, “TLD Dosimeters and Techniques”, American Society for Testing and Materials, 1916 Race Street, Philadelphia, PA 19103.
    • (1916) American Society for Testing and Materials
  • 28
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    • Dosimetry Errors in Cobalt-60 Cells due to Transistion Zone Phenomena
    • presented this conference, NSRE Meeting, Las Vegas
    • L.F. Lowe, J.R. Cappelli, and E.A. Burke, “Dosimetry Errors in Cobalt-60 Cells due to Transistion Zone Phenomena”, presented this conference, NSRE Meeting, Las Vegas, 1982.
    • (1982)
    • Lowe, L.F.1    Cappelli, J.R.2    Burke, E.A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.