A Simple Formula for the Estimation of the Capacitance of Two-Dimensional Interconnects in VLSI Circuits

IEEE Electron Device Letters

Volumn 3, Issue 12, 1982, Pages 391-393

  Yuan, C P ^a   Trick, T N ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, VLSI;

EID: 0020276069     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1982.25610     Document Type: Article

References (6)

1. W. T. Weeks, “Calculation of coefficient of capacitance of multiconductor transmission lines in the presence of a dielectric interface,” IEEE Trans, on Microwave Theory and Tech., MTT-18, no. 1, pp. 35-43, Jan. 1970.
2. R. L. M. Dang and Shigyo, “Coupling capacitances for two-dimensional wires,” Electron Device Letters, EDL-2, no. 8, pp. 196-197, Aug. 1981.
3. W. H. Chang, “Analytic IC metal-line capacitance formulas,” IEEE Trans, on Microwave Theory and Tech., pp. 608-611, Sept. 1976; also pp. 712, Aug. 1977.
4. M. I. Elmasry, “Capacitance calculation in MOSFET VLSI,” IEEE Electron Device Letters, EDL-3, no. 1, pp. 6-7, Jan. 1982.
5. W. R. Smythe, “Static and Dynamic Electricity,” pp. 78, New York: McGraw-Hill, 1950.
6. H. B. Palmer, “The capacitance of a parallel-plate capacitor by the Schwartz-Christoffel transformation,” Tran. AIEE, vol. 56, pp. 363, March 1937.