MOLYBDENUM FILM PROPERTIES FOR SUBMICRON VLSI.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1982, Pages 564-567

  Oikawa, H ^a   Amazawa, T ^a   Kyuragi, H ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

FILM RESISTIVITY; MOLYBDENUM DIFFUSION INTO GATE SILICON DIOXIDE; MOLYBDENUM FILM PROPERTIES; MOLYBDENUM/SILCON DIOXIDE REACTION; SELECTIVE SILICON DIOXIDE FORMATION ON MOLYBDENUM ELECTRODE; SUBMICRON MOS VLSI;

INTEGRATED CIRCUITS, VLSI;

EID: 0020266538     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iedm.1982.190354     Document Type: Conference Paper

References (0)