HIGH CONDUCTIVITY DIFFUSION AND GATE REGIONS USING SELF-ALIGNED SILICIDE TECHNOLOGY.

Proceedings - The Electrochemical Society

Volumn 82-7, Issue , 1982, Pages 213-223

  Osburn, C M ^a   Tsai, M Y ^a   Roberts, S ^a   Lucchese, C J ^a   Ting, C Y ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION OF SELF-ALIGNED SILICIDE STRUCTURES; HIGH CONDUCTIVITY DIFFUSION AND GATE REGIONS; NEW SELF-ALIGNED SILICIDE TECHNOLOGY; NMOS TECHNOLOGY; SIDEWALL SPACER FORMATIONS; SILICIDE FORMATION;

SEMICONDUCTOR DEVICES, MOS;

EID: 0020252001     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)