GaAs LSI-Directed MESFET's with Self-Aligned Implantation for n+-Layer Technology (SAINT)

IEEE Transactions on Electron Devices

Volumn 29, Issue 11, 1982, Pages 1772-1777

  Yamasaki, Kimiyoshi ^a   Asai, Kazuyoshi ^a   Kuramada, Katsuhiko ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MESFET;

TRANSISTORS, FIELD EFFECT;

EID: 0020208082     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1982.21025     Document Type: Article

References (18)

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