메뉴 건너뛰기




Volumn 30, Issue 9, 1983, Pages 1123-1134

Steady-State Photocarrier Collection in Silicon Imaging Devices

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOCONDUCTING MATERIALS;

EID: 0020180686     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1983.21268     Document Type: Article
Times cited : (40)

References (48)
  • 1
    • 84941868446 scopus 로고
    • Joint special issue on optoelectronic devices and circuits
    • Feb.
    • S. G. Chamberlain and M. Kuhn, Guest Eds., “Joint special issue on optoelectronic devices and circuits,” IEEE Trans. Electron Devices, vol. ED-25, Feb. 1978.
    • (1978) IEEE Trans. Electron Devices , vol.ED-25
    • Chamberlain, S.G.1    Kuhn, M.2    Guest3
  • 2
    • 84941472843 scopus 로고
    • IEEE J. Solid-State Circuits
    • Feb.
    • D. D. Buss and M. F. Tompsett, Guest Eds., IEEE J. Solid-State Circuits, vol. SC-11, Feb. 1976.
    • (1976) , vol.SC-11
    • Buss, D.D.1    Tompsett, M.F.2    Guest3
  • 7
    • 36849131270 scopus 로고
    • Injected current carrier transport in a semi-infinite semiconductor and the determination of lifetimes and surface recombination velocities
    • W. Van Roosbroeck, “Injected current carrier transport in a semi-infinite semiconductor and the determination of lifetimes and surface recombination velocities,” J. App. Phys., vol. 26, pp. 380-391, 1955.
    • (1955) J. App. Phys. , vol.26 , pp. 380-391
    • Van Roosbroeck, W.1
  • 8
    • 84951889878 scopus 로고
    • Determination of small diffusion lengths in semiconductors by the electron-probe method with allowance for the rate of surface recombination and specimen size
    • M. A. Selezneva, T. A. Kupriyanova, and S. A. Ditsman, “Determination of small diffusion lengths in semiconductors by the electron-probe method with allowance for the rate of surface recombination and specimen size,” Bull. Acad. Sci. USSR, Phys. Ser., vol. 38, no. 11, pp. 79-82, 1974.
    • (1974) Bull. Acad. Sci. USSR, Phys. Ser. , vol.38 , Issue.11 , pp. 79-82
    • Selezneva, M.A.1    Kupriyanova, T.A.2    Ditsman, S.A.3
  • 9
    • 0016961310 scopus 로고
    • Theory of lifetime measurements with the scanning electron microscope: Steady state
    • F. Berz and H. K. Kuiken, “Theory of lifetime measurements with the scanning electron microscope: Steady state,” Solid-State Electron., vol. 19, pp. 437-445, 1976.
    • (1976) Solid-State Electron. , vol.19 , pp. 437-445
    • Berz, F.1    Kuiken, H.K.2
  • 10
    • 0013173645 scopus 로고
    • Electron-beam-induced currents in semiconductors
    • J. I. Hanoka and R. O. Bell, “Electron-beam-induced currents in semiconductors,” Annu. Rev. Mater. Sci., vol. 11, pp. 353-380, 1981.
    • (1981) Annu. Rev. Mater. Sci. , vol.11 , pp. 353-380
    • Hanoka, J.I.1    Bell, R.O.2
  • 11
    • 0016538249 scopus 로고
    • Single-and dual-axis lateral photodetectors of rectangular shape
    • H. J. Woltring, “Single-and dual-axis lateral photodetectors of rectangular shape,” IEEE Trans. Electron Devices, vol. ED-22, pp. 581-590, 1975.
    • (1975) IEEE Trans. Electron Devices , vol.ED-22 , pp. 581-590
    • Woltring, H.J.1
  • 12
    • 0018547168 scopus 로고
    • Modeling diffusion and collection of charge from ionizing radiation in silicon devices
    • S. Kirkpatrick, “Modeling diffusion and collection of charge from ionizing radiation in silicon devices,” IEEE Trans. Electron Devices, vol. ED-26, pp. 1742-1753, 1979.
    • (1979) IEEE Trans. Electron Devices , vol.ED-26 , pp. 1742-1753
    • Kirkpatrick, S.1
  • 13
    • 0019580224 scopus 로고
    • Charge-coupled devices for particle detection with high spatial resolution
    • C. J. S. Damerell, F. J. M. Farley, A. R. Gillman, and F. J. Wickens, “Charge-coupled devices for particle detection with high spatial resolution,” Nucl. Instrum. Methods, vol. 185, pp. 33-42, 1981.
    • (1981) Nucl. Instrum. Methods , vol.185 , pp. 33-42
    • Damerell, C.J.S.1    Farley, F.J.M.2    Gillman, A.R.3    Wickens, F.J.4
  • 14
    • 0019071738 scopus 로고
    • Monte Carlo modeling of the transport of ionizing radiation created carriers in integrated circuits
    • G. A. Sai-Halasz and M. R. Wordeman, “Monte Carlo modeling of the transport of ionizing radiation created carriers in integrated circuits,” IEEE Electron Devices Lett., vol. EDL-1, pp. 211-213, 1980.
    • (1980) IEEE Electron Devices Lett , vol.EDL-1 , pp. 211-213
    • Sai-Halasz, G.A.1    Wordeman, M.R.2
  • 15
    • 0006867569 scopus 로고
    • Photosensing arrays with improved spatial resolution
    • T. I. Kamins and G. T. Fong, “Photosensing arrays with improved spatial resolution,” IEEE Trans. Electron Devices, vol. ED-25, pp. 154-159, 1978.
    • (1978) IEEE Trans. Electron Devices , vol.ED-25 , pp. 154-159
    • Kamins, T.I.1    Fong, G.T.2
  • 16
    • 0017522848 scopus 로고
    • The response of small photovoltaic detectors to uniform radiation
    • J. Shappir and A. Kolodny, “The response of small photovoltaic detectors to uniform radiation,” IEEE Trans. Electron Devices, vol. ED-24, pp. 1093-1098, 1977;
    • (1977) IEEE Trans. Electron Devices , vol.ED-24 , pp. 1093-1098
    • Shappir, J.1    Kolodny, A.2
  • 17
    • 0019665274 scopus 로고
    • Three-dimensional numerical analysis of diffusion current and quantum efficiency of small-area Hg1-xCdxTe photodiodes
    • R. J. Briggs, “Three-dimensional numerical analysis of diffusion current and quantum efficiency of small-area Hg1-xCdxTe photodiodes,” in IéDM Tech. Dig., pp. 165-168, 1981.
    • (1981) IéDM Tech. Dig. , pp. 165-168
    • Briggs, R.J.1
  • 19
    • 0020331691 scopus 로고
    • A solid-state image sensor for image recording at 2000 frames per second
    • T. H. Lee et al., “A solid-state image sensor for image recording at 2000 frames per second,” IEEE Trans. Electron Devices, vol. ED-29, pp. 1469-1477, 1982.
    • (1982) IEEE Trans. Electron Devices , vol.ED-29 , pp. 1469-1477
    • Lee, T.H.1
  • 20
    • 0016034239 scopus 로고
    • Carrier diffusion degradation of modulation transfer function in charge-coupled imagers
    • D. H. Seib, “Carrier diffusion degradation of modulation transfer function in charge-coupled imagers,” IEEE Trans. Electron Devices, vol. ED-21, pp. 210-217, 1974.
    • (1974) IEEE Trans. Electron Devices , vol.ED-21 , pp. 210-217
    • Seib, D.H.1
  • 21
    • 84977699567 scopus 로고
    • The silicon diode array camera tube
    • M. H. Crowell and E. F. Labuda, “The silicon diode array camera tube,” Bell Syst. Tech. J., vol. 48, pp. 1481-1528, 1969.
    • (1969) Bell Syst. Tech. J. , vol.48 , pp. 1481-1528
    • Crowell, M.H.1    Labuda, E.F.2
  • 22
    • 0001219648 scopus 로고
    • MTF simulation including transmittance effects and experimental results of charge-coupled imagers
    • S. G. Chamberlain and D. H. Harper, “MTF simulation including transmittance effects and experimental results of charge-coupled imagers,” IEEE Trans. Electron Devices, vol. ED-25, pp. 145-154, 1978.
    • (1978) IEEE Trans. Electron Devices , vol.ED-25 , pp. 145-154
    • Chamberlain, S.G.1    Harper, D.H.2
  • 24
    • 84876557018 scopus 로고
    • Carrier lifetime in silicon and its impact on solar cell characteristics
    • B. O. Seraphin, Ed. Berlin: Springer ch. 5
    • K. Graff and H. Fischer, “Carrier lifetime in silicon and its impact on solar cell characteristics,” in Solar Energy Conversion – Solid-State Physics Aspects, B. O. Seraphin, Ed. Berlin: Springer, 1979, ch. 5.
    • (1979) Solar Energy Conversion – Solid-State Physics Aspects
    • Graff, K.1    Fischer, H.2
  • 25
    • 0020833255 scopus 로고
    • Reduction of lateral diffusion of photoelectrons in silicon photodiode imager arrays by internal gettering
    • Oct.
    • E. T. Nelson, C. Anagnostopoulos, J. P. Lavine, and B. C. Burkey, “Reduction of lateral diffusion of photoelectrons in silicon photodiode imager arrays by internal gettering,” IEEE Trans. Electron Devices, vol. ED-30, no. 10, Oct. 1983.
    • (1983) IEEE Trans. Electron Devices , vol.ED-30 , Issue.10
    • Nelson, E.T.1    Anagnostopoulos, C.2    Lavine, J.P.3    Burkey, B.C.4
  • 27
    • 84941861736 scopus 로고
    • Computer Science Department, Purdue University, Rep. CSD-TR 289
    • J. R. Rice, “Ellpack 77 user's guide,” Computer Science Department, Purdue University, Rep. CSD-TR 289, 1978.
    • (1978) “Ellpack 77 user's guide,”
    • Rice, J.R.1
  • 30
    • 0019714256 scopus 로고
    • Process-induced defects in silicon
    • J. E. Carroll, Ed. Bristol: Institute of Physics
    • B. O. Kolbesen and H. Strunk, “Process-induced defects in silicon,” in Solid State Devices 1980, J. E. Carroll, Ed. Bristol: Institute of Physics, 1981, pp. 21-50.
    • (1981) Solid State Devices 1980 , pp. 21-50
    • Kolbesen, B.O.1    Strunk, H.2
  • 31
    • 17944400643 scopus 로고
    • Considerations regarding gettering in integrated circuits
    • H. R. Huff, R. J. Kriegler, and Y. Takeishi, Eds. Pennington, NJ: The Electrochemical Society
    • C. W. Pearce, L. E. Katz, and T. E. Seidel, “Considerations regarding gettering in integrated circuits,” in Semiconductor Silicon 1981, H. R. Huff, R. J. Kriegler, and Y. Takeishi, Eds. Pennington, NJ: The Electrochemical Society, 1981, pp. 705-723.
    • (1981) Semiconductor Silicon 1981 , pp. 705-723
    • Pearce, C.W.1    Katz, L.E.2    Seidel, T.E.3
  • 32
    • 0019895305 scopus 로고
    • Thermally induced microdefects in Czochralski-grown silicon: Nucleation and growth behavior
    • S. Kishino, Y. Matsushita, M. Kanamori, and T. Iizuka, “Thermally induced microdefects in Czochralski-grown silicon: Nucleation and growth behavior,” Japan. J. Appl. Phys., vol. 21, pp. 1-12, 1982.
    • (1982) Japan. J. Appl. Phys. , vol.21 , pp. 1-12
    • Kishino, S.1    Matsushita, Y.2    Kanamori, M.3    Iizuka, T.4
  • 33
    • 0017004161 scopus 로고
    • Steady-state diffusion of point defects in the interaction force field
    • M. H. Yoo and W. H. Butler, “Steady-state diffusion of point defects in the interaction force field,” Phys. Status Solidi B, vol. 77, pp. 181-193, 1976.
    • (1976) Phys. Status Solidi B , vol.77 , pp. 181-193
    • Yoo, M.H.1    Butler, W.H.2
  • 34
    • 0019544005 scopus 로고
    • A method for improving t spatial resolution of frontside-illuminated CCD's
    • M. M. Blouke and D. A. Robinson, “A method for improving t spatial resolution of frontside-illuminated CCD's,” IEEE Trans. Electron Devices, vol. ED-28, pp. 251-256, 1981.
    • (1981) IEEE Trans. Electron Devices , vol.ED-28 , pp. 251-256
    • Blouke, M.M.1    Robinson, D.A.2
  • 35
    • 84939373676 scopus 로고
    • Microdefects due to oxygen precipitates and their application to CMOS LSI and CCD Sensor
    • abstract no. 435 Fall
    • M. Ogino, T. Usami, and M. Watanabe, “Microdefects due to oxygen precipitates and their application to CMOS LSI and CCD Sensor,” in Proc. Electrochemical Society, abstract no. 435, pp. 1097-1099, Fall 1980.
    • (1980) Proc. Electrochemical Society , pp. 1097-1099
    • Ogino, M.1    Usami, T.2    Watanabe, M.3
  • 36
    • 0020155317 scopus 로고
    • The effect of substrate materials on holding time degradation in MOS dynamic RAM
    • H. Otsuka, K. Watanabe, H. Nishimura, H. Iwai, and H. Nihira, “The effect of substrate materials on holding time degradation in MOS dynamic RAM,” IEEE Electron Device Lett., vol. EDL-3, pp. 182-184, 1982.
    • (1982) IEEE Electron Device Lett , vol.EDL-3 , pp. 182-184
    • Otsuka, H.1    Watanabe, K.2    Nishimura, H.3    Iwai, H.4    Nihira, H.5
  • 38
    • 36149015973 scopus 로고
    • Intrinsic optical absorption in single-crystal germanium and silicon at 77° K and 300° K
    • W. C. Dash and R. Newman, “Intrinsic optical absorption in single-crystal germanium and silicon at 77° K and 300° K,” Phys. Rev., vol. 99, pp. 1151-1155, 1955.
    • (1955) Phys. Rev. , vol.99 , pp. 1151-1155
    • Dash, W.C.1    Newman, R.2
  • 39
    • 36149016256 scopus 로고
    • Optical constants of silicon in the region 1 to 10 eV
    • H. R. Philipp and E. A. Taft, “Optical constants of silicon in the region 1 to 10 eV,” Phys. Rev., vol. 120, pp. 37-38, 1960.
    • (1960) Phys. Rev. , vol.120 , pp. 37-38
    • Philipp, H.R.1    Taft, E.A.2
  • 40
    • 36849109094 scopus 로고
    • Influence of oxide layers on the determination of the optical properties of silicon
    • H. R. Philipp, “Influence of oxide layers on the determination of the optical properties of silicon,” J. Appl. Phys., vol. 43, pp. 2835-2839, 1972.
    • (1972) J. Appl. Phys. , vol.43 , pp. 2835-2839
    • Philipp, H.R.1
  • 41
    • 0018483291 scopus 로고
    • Reflectance of thinly oxidized silicon at normal incidence
    • T. Huen, “Reflectance of thinly oxidized silicon at normal incidence,” Appl. Opt., vol. 18, pp. 1927-1936, 1979.
    • (1979) Appl. Opt. , vol.18 , pp. 1927-1936
    • Huen, T.1
  • 42
    • 0019696047 scopus 로고
    • Optical absorption measurements of pure and heavily doped silicon from 1.24 to 4,63 eV and the effect on Solar cell performance
    • G. E. Jellison, Jr., F. A. Modine, C. W. White, and R. T. Young, “Optical absorption measurements of pure and heavily doped silicon from 1.24 to 4,63 eV and the effect on Solar cell performance,” in Proc. 15th IEEE Photovoltaic Specialists Conf., pp. 1164-1169, 1981.
    • (1981) Proc. 15th IEEE Photovoltaic Specialists Conf. , pp. 1164-1169
    • Jellison, G.E.1    Modine, F.A.2    White, C.W.3    Young, R.T.4
  • 43
    • 0018441843 scopus 로고
    • Temperature dependence of the optical properties of silicon
    • H. A. Weakliem and D. Redfield, “Temperature dependence of the optical properties of silicon,” J. Appl. Phys., vol. 50, pp. 1491-1493, 1979.
    • (1979) J. Appl. Phys. , vol.50 , pp. 1491-1493
    • Weakliem, H.A.1    Redfield, D.2
  • 44
    • 0000920502 scopus 로고
    • Optical absorption in heavily doped silicon
    • P. E. Schmid, “Optical absorption in heavily doped silicon,” Phys. Rev. B, vol. 23, pp. 5531-5536, 1981.
    • (1981) Phys. Rev. B , vol.23 , pp. 5531-5536
    • Schmid, P.E.1
  • 45
    • 0039014466 scopus 로고
    • Fundamental absorption edge of silicon heavily doped with donor or acceptor impurities
    • A. A. Vol'fson and V. K. Subashiev, “Fundamental absorption edge of silicon heavily doped with donor or acceptor impurities,” Sov. Phys. – Semicond., vol. 1, pp. 327-332, 1967.
    • (1967) Sov. Phys. – Semicond. , vol.1 , pp. 327-332
    • Vol'Fson, A.A.1    Subashiev, V.K.2
  • 47
    • 36149024990 scopus 로고
    • Intrinsic optical absorption in germanium-silicon alloys
    • R. Braunstein, A. R. Moore, and F. Herman, “Intrinsic optical absorption in germanium-silicon alloys,” Phys. Rev., vol. 109, pp. 695-710, 1958.
    • (1958) Phys. Rev. , vol.109 , pp. 695-710
    • Braunstein, R.1    Moore, A.R.2    Herman, F.3
  • 48
    • 0016072218 scopus 로고
    • Measurement of diffusion length in solar cells
    • J. H. Reynolds and A. Meulenberg, Jr., “Measurement of diffusion length in solar cells,” J. Appl. Phys., vol. 45, pp. 2582-2592, 1974.
    • (1974) J. Appl. Phys. , vol.45 , pp. 2582-2592
    • Reynolds, J.H.1    Meulenberg, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.