A Subharmonic Mixer Using a Planar Doped Barrier Diode with Symmetric Conductance

IEEE Electron Device Letters

Volumn 3, Issue 7, 1982, Pages 205-207

  Malik, R J ^a   Dixon, S ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, SCHOTTKY BARRIER;

EID: 0020155312     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1982.25539     Document Type: Article

References (5)

1. M. V. Schneider and W. W. Snell, Jr., “Harmonically pumped stripline down-converter,” IEEE Trans. Microwave Theory Tech., MTT-23, p. 271, 1975.
2. P. S. Henry, B. S. Glance, and M. V. Schneider, “Local-oscillator noise cancellation in the subharmonically pumped down-converter,” IEEE Trans. Microwave Theory Tech., MTT-24, p. 254, 1976.
3. M.V. Schneider, “Electrical characteristics of metal-semiconductor junctions,” IEEE Trans. Microwave Theory Tech., MTT-28, p. 1169, 1980.
4. R. J. Malik, T. R. AuCoin, R. L. Ross, K. Board, C. E. C. Wood, and L. F. Eastman, “Planar-doped barriers in GaAs by molecular beam epitaxy,” Electron. Lett., vol. 16, p. 836, 1980.
5. R. J. Malik, K. Board, L. F. Eastman, C. E. C. Wood, T. R. AuCoin, and R. L. Ross, “Rectifying variable planar-doped-barrier structures in GaAs,” Inst. Phys. Conf. Ser., vol. 45, p. 697, 1981.