Single-Gate MESFET Frequency Doublers

IEEE Transactions on Microwave Theory and Techniques

Volumn 30, Issue 6, 1982, Pages 869-875

  Gopinath, Anand ^a   Rankin, J Bruce ^b  

^a KING'S COLLEGE LONDON   (United Kingdom)

^b MIT LINCOLN LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; TRANSISTORS, FIELD EFFECT - APPLICATIONS;

FREQUENCY DOUBLER;

ELECTRONIC CIRCUITS, FREQUENCY MULTIPLYING;

EID: 0020139223     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/TMTT.1982.1131162     Document Type: Article

References (10)

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10. R. A. Pucel, H. A. Haus, and H. Statz, “Signal and noise properties of Gallium Arsenide microwave field-effect transistors,” in Advances in Electronics and Electron Physics, vol. 38, L. Marton, Ed. New York: Academic, 1975, pp. 195-266.