-
1
-
-
84943675961
-
-
Proceedings from the topical meeting on “The Limits to Miniaturization,” for optics, electronics, and mechanics at the Swiss Federal Institute of Technology, Lausanne, Switzerland, Oct.
-
Proceedings from the topical meeting on “The Limits to Miniaturization,” for optics, electronics, and mechanics at the Swiss Federal Institute of Technology, Lausanne, Switzerland, Oct. 1980.
-
(1980)
-
-
-
2
-
-
84943680737
-
-
Commercial devices have been available for some time. See, for example, the National Semiconductor catalog, Transducers; Pressure and Temperature for Aug.
-
Commercial devices have been available for some time. See, for example, the National Semiconductor catalog, Transducers; Pressure and Temperature for Aug. 1974.
-
(1974)
-
-
-
3
-
-
84943681145
-
-
Texas Instruments Thermal Character Print Head, EPN3620 Bulletin DL-S7712505
-
Texas Instruments Thermal Character Print Head, EPN3620 Bulletin DL-S7712505, 1977.
-
(1977)
-
-
-
4
-
-
0013357612
-
A monolithic thermal converter
-
May
-
P. O'Neill, “A monolithic thermal converter,” Hewlett-Packard J., p. 12, May 1980.
-
(1980)
Hewlett-Packard J.
, pp. 12
-
-
O'Neill, P.1
-
5
-
-
0000942144
-
Ink jet printing nozzle arrays etched in silicon
-
E. Bassous, H. H. Taub, and L. Kuhn, “Ink jet printing nozzle arrays etched in silicon,” Appl. Phys. Lett., vol. 31, p. 135, 1977.
-
(1977)
Appl. Phys. Lett.
, vol.31
, pp. 135
-
-
Bassous, E.1
Taub, H.H.2
Kuhn, L.3
-
6
-
-
0018738199
-
Sensor development in the microcomputer age
-
W. G. Wolber and K. D. Wise, “Sensor development in the microcomputer age,” IEEE Trans. Electron Devices, vol. ED-26, p. 1864, 1979.
-
(1979)
IEEE Trans. Electron Devices
, vol.ED-26
, pp. 1864
-
-
Wolber, W.G.1
Wise, K.D.2
-
7
-
-
0018985544
-
Microprocessors get integrated sensors
-
Feb.
-
S. Middelhoek, J. B. Angell, and D.J.W. Noorlag, “Microprocessors get integrated sensors,” IEEE Spectrum, vol. 17, p. 42, Feb. 1980.
-
(1980)
IEEE Spectrum
, vol.17
, pp. 42
-
-
Middelhoek, S.1
Angell, J.B.2
Noorlag, D.J.W.3
-
8
-
-
0004289416
-
-
2nd ed. (Monographs on the Physics and Chemistry of Materials). Oxford, England: Clarendon
-
A. Kelly, Strong Solids, 2nd ed. (Monographs on the Physics and Chemistry of Materials). Oxford, England: Clarendon, 1973.
-
(1973)
Strong Solids
-
-
Kelly, A.1
-
10
-
-
84867907561
-
-
R. C. Weast, Ed. Cleveland, OH: CRC Publ.
-
CRC Handbook of Chemistry and Physics, R. C. Weast, Ed. Cleveland, OH: CRC Publ., 1980.
-
(1980)
CRC Handbook of Chemistry and Physics
-
-
-
11
-
-
49749202915
-
Deformation and fracture of small silicon crystals
-
G. L. Pearson, W. T. Reed, Jr., and W. L. Feldman, “Deformation and fracture of small silicon crystals,” Acta Metallurgica, vol. 5, p. 181, 1957.
-
(1957)
Acta Metallurgica
, vol.5
, pp. 181
-
-
Pearson, G.L.1
Reed, W.T.2
Feldman, W.L.3
-
12
-
-
0040935986
-
Vapor-phase deposition of beta-silicon carbide on silicon substrates
-
K. Kuroiwa and T. Sugano, “Vapor-phase deposition of beta-silicon carbide on silicon substrates,” J. Electrochem. Soc, vol. 120, p. 138, 1973.
-
(1973)
J. Electrochem. Soc
, vol.120
, pp. 138
-
-
Kuroiwa, K.1
Sugano, T.2
-
13
-
-
0019283390
-
Chemical vapor deposition of single crystalline beta-SiC films on silicon substrate with sputtered SiC intermediate layer
-
S. Nishino, Y. Hazuki, H. Matsunami, and T. Tanaka, “Chemical vapor deposition of single crystalline beta-SiC films on silicon substrate with sputtered SiC intermediate layer,” J. Electrochem. Soc, vol. 127, p. 2674, 1980.
-
(1980)
J. Electrochem. Soc
, vol.127
, pp. 2674
-
-
Nishino, S.1
Hazuki, Y.2
Matsunami, H.3
Tanaka, T.4
-
14
-
-
0014778047
-
Silicon nitride: Tribological applications of a Ceramic material
-
C. W. Dee, “Silicon nitride: Tribological applications of a Ceramic material,” Tribology, vol. 3, p. 89, 1970.
-
(1970)
Tribology
, vol.3
, pp. 89
-
-
Dee, C.W.1
-
15
-
-
0016986886
-
Grinding damage of silicon nitride determined by abrasive wear tests
-
E. Rabinowicz, “Grinding damage of silicon nitride determined by abrasive wear tests,” Wear, vol. 39, p. 101, 1976.
-
(1976)
Wear
, vol.39
, pp. 101
-
-
Rabinowicz, E.1
-
16
-
-
0642329173
-
Characterization of vapor-deposited paraxylylene coatings
-
T. E. Baker, S. L. Bagdasarian, G. L. Kix, and J. S. Judge, “Characterization of vapor-deposited paraxylylene coatings,” J. Electrochem. Soc, vol. 124, p. 897, 1977.
-
(1977)
J. Electrochem. Soc
, vol.124
, pp. 897
-
-
Baker, T.E.1
Bagdasarian, S.L.2
Kix, G.L.3
Judge, J.S.4
-
17
-
-
0019073669
-
Properties of thin polyimide films
-
L. B. Rothman, “Properties of thin polyimide films,” J. Electrochem. Soc. vol. 127, p. 2216, 1980.
-
(1980)
J. Electrochem. Soc.
, vol.127
, pp. 2216
-
-
Rothman, L.B.1
-
20
-
-
84943675431
-
Fatigue strength of crystalline solids
-
presented at the Symposium on Nature and Origin of Strength of Materials at the 63rd Annual Meeting of ASTM (ASTM Publisher
-
G. Sinclair and C. Feltner, “Fatigue strength of crystalline solids,” presented at the Symposium on Nature and Origin of Strength of Materials at the 63rd Annual Meeting of ASTM (ASTM Publisher, 1960, p. 129).
-
(1960)
, pp. 129
-
-
Sinclair, G.1
Feltner, C.2
-
21
-
-
0011216335
-
A low-stress insulating film on silicon by chemical vapor deposition
-
C. M. Drum and M. J. Rand, “A low-stress insulating film on silicon by chemical vapor deposition,” J. Appl. Phys., vol. 39, p. 4458, 1968.
-
(1968)
J. Appl. Phys.
, vol.39
, pp. 4458
-
-
Drum, C.M.1
Rand, M.J.2
-
22
-
-
0019392854
-
Rotating MNOS disk memory device
-
S. Iwamura, Y. Nishida, and K. Hashimoto, “Rotating MNOS disk memory device,” IEEE Trans. Electron Devices, vol. ED-28, p. 854, 1981.
-
(1981)
IEEE Trans. Electron Devices
, vol.ED-28
, pp. 854
-
-
Iwamura, S.1
Nishida, Y.2
Hashimoto, K.3
-
23
-
-
84975413933
-
A water-amine-complexing agent system for etching silicon
-
R. M. Finne and D. L. Klein, “A water-amine-complexing agent system for etching silicon,” J. Electrochem. Soc, vol. 114, p. 965, 1967.
-
(1967)
J. Electrochem. Soc
, vol.114
, pp. 965
-
-
Finne, R.M.1
Klein, D.L.2
-
24
-
-
0037968405
-
-
H. A. Waggener, R. C. Kragness, and A. L. Taylor, Electronics, vol. 40, p. 274, 1967.
-
(1967)
Electronics
, vol.40
, pp. 274
-
-
Waggener, H.A.1
Kragness, R.C.2
Taylor, A.L.3
-
25
-
-
0001695438
-
Chemical etching of silicon, II. The system HF, HNO3, HC2H3O2
-
H. Robbins and B. Schwartz, “Chemical etching of silicon, II. The system HF, HNO3, HC2H3O2,” J. Electrochem. Soc, vol. 106, p. 505, 1959.
-
(1959)
J. Electrochem. Soc
, vol.106
, pp. 505
-
-
Robbins, H.1
Schwartz, B.2
-
26
-
-
0017266754
-
Chemical etching of silicon, IV. Etching technology
-
B. Schwartz and H. Robbins, “Chemical etching of silicon, IV. Etching technology,” J. Electrochem. Soc, vol. 123, p. 1903, 1976.
-
(1976)
J. Electrochem. Soc
, vol.123
, pp. 1903
-
-
Schwartz, B.1
Robbins, H.2
-
27
-
-
0014567761
-
Ethylene diamine-catechol-water mixture shows preferential etching of p-n junctions
-
J. C. Greenwood, “Ethylene diamine-catechol-water mixture shows preferential etching of p-n junctions,” J. Electrochem. Soc, vol. 116, p. 1325, 1969.
-
(1969)
J. Electrochem. Soc
, vol.116
, pp. 1325
-
-
Greenwood, J.C.1
-
28
-
-
84963736461
-
Ethylene diamine-pyrocatechol-water mixture shows etching anomaly in boron-doped silicon
-
A. Bohg, “Ethylene diamine-pyrocatechol-water mixture shows etching anomaly in boron-doped silicon,” J. Electrochem. Soc, vol. 118, p. 401, 1971.
-
(1971)
J. Electrochem. Soc
, vol.118
, pp. 401
-
-
Bohg, A.1
-
29
-
-
0015772701
-
Controlled preferential etching technology
-
H. R. Huff and R. R. Burgess, Eds. (The Electrochemical Society Softbound Symposium Ser., Princeton, NJ
-
H. Huraoka, T. Ohhashi, and Y. Sumitomo, “Controlled preferential etching technology,” in Semiconductor Silicon 1973, H. R. Huff and R. R. Burgess, Eds. (The Electrochemical Society Softbound Symposium Ser., Princeton, NJ, 1973), p. 327.
-
(1973)
Semiconductor Silicon 1973
, pp. 327
-
-
Huraoka, H.1
Ohhashi, T.2
Sumitomo, Y.3
-
30
-
-
0003458762
-
A gas chromatography system fabricated on a silicon wafer using integrated circuit technology
-
Ph.D. dissertation, Department of Electrical Engineering, Stanford University, Stanford, CA
-
S. C. Terry, “A gas chromatography system fabricated on a silicon wafer using integrated circuit technology,” Ph.D. dissertation, Department of Electrical Engineering, Stanford University, Stanford, CA, 1975.
-
(1975)
-
-
Terry, S.C.1
-
31
-
-
0017981972
-
Chemical etching of silicon, germanium, gallium arsenide, and gallium phosphide
-
W. Kern, “Chemical etching of silicon, germanium, gallium arsenide, and gallium phosphide,” RCA Rev., vol. 29, p. 278, 1978.
-
(1978)
RCA Rev.
, vol.29
, pp. 278
-
-
Kern, W.1
-
33
-
-
0015771980
-
Anisotropic etching of silicon with potassium hydroxide-water-isopropyl alcohol
-
H. R. Huff and R. R. Burgess, Eds. (The Electrochemical Society Softbound Symposium Ser., Princeton, NJ
-
J. B. Price, “Anisotropic etching of silicon with potassium hydroxide-water-isopropyl alcohol,” in Semiconductor Silicon 1973, H. R. Huff and R. R. Burgess, Eds. (The Electrochemical Society Softbound Symposium Ser., Princeton, NJ, 1973), p. 339.
-
(1973)
Semiconductor Silicon 1973
, pp. 339
-
-
Price, J.B.1
-
34
-
-
0001059915
-
On etching very narrow grooves in silicon
-
D. L. Kendall, “On etching very narrow grooves in silicon,” Appl. Phys. Lett., vol. 26, p. 195, 1975.
-
(1975)
Appl. Phys. Lett.
, vol.26
, pp. 195
-
-
Kendall, D.L.1
-
35
-
-
0000915839
-
Detection of discontinuities in passivating layers on silicon by NaOH anisotropic etch
-
I. J. Pugacz-Muraszkiewicz, “Detection of discontinuities in passivating layers on silicon by NaOH anisotropic etch,” IBM J. Res. Develop., vol. 16, p. 523, 1972.
-
(1972)
IBM J. Res. Develop.
, vol.16
, pp. 523
-
-
Pugacz-Muraszkiewicz, I.J.1
-
36
-
-
0018030083
-
Fabrication of novel three-dimensional microstructures by the anisotropic etching of (100) and (110) silicon
-
E. Bassous, “Fabrication of novel three-dimensional microstructures by the anisotropic etching of (100) and (110) silicon,” IEEE Trans. Electron Devices, vol. ED-25, p. 1178, 1978.
-
(1978)
IEEE Trans. Electron Devices
, vol.ED-25
, pp. 1178
-
-
Bassous, E.1
-
37
-
-
0018030427
-
Anisotropic etching of silicon
-
K. E. Bean, “Anisotropic etching of silicon,” IEEE Trans. Electron Devices, vol. ED-25, p. 1185, 1978.
-
(1978)
IEEE Trans. Electron Devices
, vol.ED-25
, pp. 1185
-
-
Bean, K.E.1
-
38
-
-
0014806125
-
The etching of deep vertical-walled patterns in silicon
-
A. I. Stoller, “The etching of deep vertical-walled patterns in silicon,” RCA Rev., vol. 31, p. 271, 1970.
-
(1970)
RCA Rev.
, vol.31
, pp. 271
-
-
Stoller, A.I.1
-
39
-
-
0000052990
-
Vertical etching of silicon at very high aspect ratios
-
D. Kendall, “Vertical etching of silicon at very high aspect ratios,” Annu. Rev. Materials Sci., vol. 9, p. 373, 1979.
-
(1979)
Annu. Rev. Materials Sci.
, vol.9
, pp. 373
-
-
Kendall, D.1
-
40
-
-
0015772256
-
Anisotropic etching of silicon using electrochemical displacement reactions
-
H. R. Huff and R. R. Burgess, Eds. (The Electrochemical Society Softbound Symposium Ser., Princeton, NJ
-
W. K. Zwicker and K. K. Kurtz, “Anisotropic etching of silicon using electrochemical displacement reactions,” in Semiconductor Silicon 1973, H. R. Huff and R. R. Burgess, Eds. (The Electrochemical Society Softbound Symposium Ser., Princeton, NJ, 1973), p. 315.
-
(1973)
Semiconductor Silicon 1973
, pp. 315
-
-
Zwicker, W.K.1
Kurtz, K.K.2
-
41
-
-
0014583919
-
Anisotropic etching of silicon
-
D. B. Lee, “Anisotropic etching of silicon,” J. Appl. Phys., vol. 40, p. 4569, 1969.
-
(1969)
J. Appl. Phys.
, vol.40
, pp. 4569
-
-
Lee, D.B.1
-
42
-
-
0016496213
-
Optimization of the hydrazine-water solution for anisotropic etching of silicon in integrated circuit technology
-
M. J. Declercq, L. Gerzberg, and J. D. Meindl, “Optimization of the hydrazine-water solution for anisotropic etching of silicon in integrated circuit technology,” J. Electrochem. Soc, vol. 122, p. 545, 1975.
-
(1975)
J. Electrochem. Soc
, vol.122
, pp. 545
-
-
Declercq, M.J.1
Gerzberg, L.2
Meindl, J.D.3
-
43
-
-
0016496026
-
Correlation of the anisotropic etching of single crystal silicon spheres and wafers
-
D. F. Weirauch, “Correlation of the anisotropic etching of single crystal silicon spheres and wafers,” J. Appl. Phys., vol. 46, p. 1478, 1975.
-
(1975)
J. Appl. Phys.
, vol.46
, pp. 1478
-
-
Weirauch, D.F.1
-
44
-
-
0018004818
-
The fabrication of high precision nozzles by the anisotropic etching of (100) silicon
-
E. Bassous and E. F. Baran, “The fabrication of high precision nozzles by the anisotropic etching of (100) silicon,”. Electrochem. Soc, vol. 125, p. 1321, 1978.
-
(1978)
Electrochem. Soc
, vol.125
, pp. 1321
-
-
Bassous, E.1
Baran, E.F.2
-
45
-
-
0018506572
-
The controlled etching of silicon in catalyzed ethylene diamine-pyrocatechol-water solutions
-
A. Reisman, M. Berkenblit, S. A. Chan, F. B. Kaufman, and D. C. Green, “The controlled etching of silicon in catalyzed ethylene diamine-pyrocatechol-water solutions,”. Electrochem. Soc, vol. 126, p. 1406, 1979.
-
(1979)
Electrochem. Soc
, vol.126
, pp. 1406
-
-
Reisman, A.1
Berkenblit, M.2
Chan, S.A.3
Kaufman, F.B.4
Green, D.C.5
-
46
-
-
84885757292
-
Electrolytic shaping of germanium and silicon
-
Mar.
-
A. Uhlir, “Electrolytic shaping of germanium and silicon,” Bell Syst. Tech. J., vol. 36, p. 333, Mar. (1956).
-
(1956)
Bell Syst. Tech. J.
, vol.36
, pp. 333
-
-
Uhlir, A.1
-
47
-
-
84975353142
-
Electropolishing silicon in hydroflouric acid solutions
-
D. R. Turner, “Electropolishing silicon in hydroflouric acid solutions,” J. Electrochem. Soc, vol. 105, p. 406, 1958.
-
(1958)
J. Electrochem. Soc
, vol.105
, pp. 406
-
-
Turner, D.R.1
-
48
-
-
0344596605
-
Application of electrochemical etching of silicon to semiconductor device technology
-
M.J.J. Theunissen, J. A. Appels, and W.H.C.G. Verkuylen, “Application of electrochemical etching of silicon to semiconductor device technology,” J. Electrochem. Soc, vol. 117, p. 959, 1970.
-
(1970)
J. Electrochem. Soc
, vol.117
, pp. 959
-
-
Theunissen, M.J.J.1
Appels, J.A.2
Verkuylen, W.H.C.G.3
-
49
-
-
84975413952
-
Anodic dissolution of n+ silicon
-
R. L. Meek, “Anodic dissolution of n+ silicon,” J. Electrochem. 0Soc, vol 118, p. 437, 1971.
-
(1971)
J. Electrochem. 0Soc
, vol.118
, pp. 437
-
-
Meek, R.L.1
-
50
-
-
84921192694
-
Preferential electrochemical etching of p+ silicon in an aqueous HF-H2S04 electrolyte
-
C. D. Wen and K. P. Weller, “Preferential electrochemical etching of p+ silicon in an aqueous HF-H2S04 electrolyte,” J. Elec trochem. Soc, vol. 119, p. 547, 1972.
-
(1972)
J. Elec trochem. Soc
, vol.119
, pp. 547
-
-
Wen, C.D.1
Weller, K.P.2
-
51
-
-
84910197048
-
Preparation of thin silicon crystals by electrochemical thinning of epitaxially grown structures
-
H.J.A. van Dijk and J. de Jonge, “Preparation of thin silicon crystals by electrochemical thinning of epitaxially grown structures,”. Electrochem. Soc, vol. 117, p. 553, 1970.
-
(1970)
Electrochem. Soc
, vol.117
, pp. 553
-
-
van Dijk, H.J.A.1
de Jonge, J.2
-
52
-
-
84950868778
-
Electrochemically thinned n/n* epitaxial silicon - Method and applications
-
R. L. Meek, “Electrochemically thinned n/n* epitaxial silicon - Method and applications,” J. Electrochem. Soc, vol. 118, p. 1240, 1971.
-
(1971)
J. Electrochem. Soc
, vol.118
, pp. 1240
-
-
Meek, R.L.1
-
53
-
-
0014750259
-
Electrochemically controlled thinning of silicon
-
H. A. Waggener, “Electrochemically controlled thinning of silicon,” Bell Syst. Tech. J., vol. 50, p. 473, 1970.
-
(1970)
Bell Syst. Tech. J.
, vol.50
, pp. 473
-
-
Waggener, H.A.1
-
54
-
-
0002345301
-
An electrochemical etch-stop for the formation of silicon microstructures
-
T. N. Jackson, M. A. Tischler, and K. D. Wise, “An electrochemical etch-stop for the formation of silicon microstructures,” IEEE Electron Device Lett., vol. EDL-2, p. 44, 1981.
-
(1981)
IEEE Electron Device Lett.
, vol.EDL-2
, pp. 44
-
-
Jackson, T.N.1
Tischler, M.A.2
Wise, K.D.3
-
55
-
-
0016568035
-
Formation and properties of porous silicon and its applications
-
Y. Watanabe, Y. Arita, T. Yokoyama, and Y. Igarashi, “Formation and properties of porous silicon and its applications,” J. Electrochem. Soc., vol. 122, p. 1351, 1975.
-
(1975)
J. Electrochem. Soc.
, vol.122
, pp. 1351
-
-
Watanabe, Y.1
Arita, Y.2
Yokoyama, T.3
Igarashi, Y.4
-
56
-
-
0018984238
-
Formation mechanism of porous silicon layer by anodization in HF solution
-
T. Unagami, “Formation mechanism of porous silicon layer by anodization in HF solution,” J. Electrochem. Soc, vol. 127, p. 476, 1980.
-
(1980)
J. Electrochem. Soc
, vol.127
, pp. 476
-
-
Unagami, T.1
-
57
-
-
33646299455
-
An investigation of the application of porous silicon layers to the dielectric isolation of integrated circuits
-
T. C. Teng, “An investigation of the application of porous silicon layers to the dielectric isolation of integrated circuits,” J. Electrochem. Soc, vol. 126, p. 870, 1979.
-
(1979)
J. Electrochem. Soc
, vol.126
, pp. 870
-
-
Teng, T.C.1
-
58
-
-
0018005322
-
Structure of porous silicon layer and heat-treatment effect
-
T. Unagami and M. Seki, “Structure of porous silicon layer and heat-treatment effect,” J. Electrochem. Soc, vol. 125, p. 1339, 1978.
-
(1978)
J. Electrochem. Soc
, vol.125
, pp. 1339
-
-
Unagami, T.1
Seki, M.2
-
59
-
-
0000550286
-
Laser chemical technique for rapid direct writing of surface relief in silicon
-
D. J. Ehrlich, R. M. Osgood, and T. F. Deutsch, “Laser chemical technique for rapid direct writing of surface relief in silicon,” Appl. Phys. Lett., vol. 38, p. 1018, 1981.
-
(1981)
Appl. Phys. Lett.
, vol.38
, pp. 1018
-
-
Ehrlich, D.J.1
Osgood, R.M.2
Deutsch, T.F.3
-
60
-
-
4243166724
-
Behavior of large-scale surface perturbations during silicon epitaxial growth
-
W. R. Runyan, E. G. Alexander, and S. E. Craig, Jr., “Behavior of large-scale surface perturbations during silicon epitaxial growth,” J. Electrochem. Soc, vol. 114, p. 1154, 1967.
-
(1967)
J. Electrochem. Soc
, vol.114
, pp. 1154
-
-
Runyan, W.R.1
Alexander, E.G.2
Craig, S.E.3
-
61
-
-
0016646067
-
Epitaxial deposition of silicon in deep grooves
-
R. K. Smeltzer, “Epitaxial deposition of silicon in deep grooves,” J. Electrochem. Soc, vol. 122, p. 1666, 1975.
-
(1975)
J. Electrochem. Soc
, vol.122
, pp. 1666
-
-
Smeltzer, R.K.1
-
62
-
-
0018029737
-
Vertical channel field-controlled thyristors with high gain and fast switching speeds
-
B. W. Wessels and B. J. Baliga, “Vertical channel field-controlled thyristors with high gain and fast switching speeds,” IEEE Trans. Electron Devices, vol. ED-25, p. 1261, 1978.
-
(1978)
IEEE Trans. Electron Devices
, vol.ED-25
, pp. 1261
-
-
Wessels, B.W.1
Baliga, B.J.2
-
63
-
-
84919065378
-
Monolithic polycrystalline silicon distributed RC devices
-
L. Gerzberg and J. Meindl, “Monolithic polycrystalline silicon distributed RC devices,” IEEE Trans. Electron Devices, vol. ED-25, p. 1375, 1978.
-
(1978)
IEEE Trans. Electron Devices
, vol.ED-25
, pp. 1375
-
-
Gerzberg, L.1
Meindl, J.2
-
64
-
-
0015774190
-
Chemical vapor deposited silicon and its device applications
-
H. R. Huff and R. R. Burgess, Eds. (The Electrochemical Society Softbound Symposium Ser., Princeton, NJ
-
P. Rai-Choudhury, “Chemical vapor deposited silicon and its device applications,” in Semiconductor Silicon 1973, H. R. Huff and R. R. Burgess, Eds. (The Electrochemical Society Softbound Symposium Ser., Princeton, NJ, 1973), p. 243.
-
(1973)
Semiconductor Silicon 1973
, pp. 243
-
-
Rai-Choudhury, P.1
-
65
-
-
0016964049
-
Random walk of liquid droplets migrating in silicon
-
H. E. Cline and T. R. Anthony, “Random walk of liquid droplets migrating in silicon,”. Appl. Phys., vol. 47, p. 2316, 1976.
-
(1976)
Appl. Phys.
, vol.47
, pp. 2316
-
-
Cline, H.E.1
Anthony, T.R.2
-
66
-
-
0016964521
-
High-speed droplet migration in silicon
-
“High-speed droplet migration in silicon,”. Appl. Phys., vol. 47, p. 2325, 1976.
-
(1976)
Appl. Phys.
, vol.47
, pp. 2325
-
-
-
67
-
-
0016962845
-
Thermomigration of aluminum-rich liquid wires through silicon
-
“Thermomigration of aluminum-rich liquid wires through silicon,”. Appl. Phys., vol. 47, p. 2332, 1976.
-
(1976)
Appl. Phys.
, vol.47
, pp. 2332
-
-
-
68
-
-
0017535361
-
Lamellar devices processed by thermomigration
-
T. R. Anthony and H. E. Cline, “Lamellar devices processed by thermomigration,”. Appl. Phys, vol. 48, p. 3943, 1977.
-
(1977)
Appl. Phys
, vol.48
, pp. 3943
-
-
Anthony, T.R.1
Cline, H.E.2
-
69
-
-
0017960298
-
Migration of fine molten wires in thin silicon wafers
-
“Migration of fine molten wires in thin silicon wafers,” J. Appl. Phys., vol. 49, p. 2412, 1978.
-
(1978)
J. Appl. Phys.
, vol.49
, pp. 2412
-
-
-
70
-
-
0017972029
-
On the thermomigration of liquid wires
-
“On the thermomigration of liquid wires,” J. Appl. Phys, vol. 49, p. 2777, 1978.
-
(1978)
J. Appl. Phys
, vol.49
, pp. 2777
-
-
-
71
-
-
0018151728
-
Stresses generated by the thermomigration of liquid inclusions in silicon
-
“Stresses generated by the thermomigration of liquid inclusions in silicon,” J. Appl. Phys., vol. 49, p. 5774, 1978.
-
(1978)
J. Appl. Phys.
, vol.49
, pp. 5774
-
-
-
72
-
-
0018978908
-
Joining and recrystallization of Si using the thermomigration process
-
T. Mizrah, “Joining and recrystallization of Si using the thermomigration process,”. Appl. Phys., vol. 51, p. 1207, 1980.
-
(1980)
Appl. Phys.
, vol.51
, pp. 1207
-
-
Mizrah, T.1
-
73
-
-
0018738658
-
Gate-controlled diodes for ionic concentration measurement
-
C. C. Wen, T. C. Chen, and J. M. Zemel, “Gate-controlled diodes for ionic concentration measurement,” IEEE Trans. Electron Devices, vol. ED-26, p. 1945, 1979.
-
(1979)
IEEE Trans. Electron Devices
, vol.ED-26
, pp. 1945
-
-
Wen, C.C.1
Chen, T.C.2
Zemel, J.M.3
-
74
-
-
84943679968
-
Photo-induced zone migration (PIZM) in semiconductors
-
L. C. Kimerling, H. J. Leamy, and K. A. Jackson, “Photo-induced zone migration (PIZM) in semiconductors,” in Proc. Symp. on Laser end Electron Beam Processing of Electronic Materials (The Electrochemical Society Publisher, Electronics Division), vol. 80-1, p. 242, 1980.
-
(1980)
Proc. Symp. on Laser end Electron Beam Processing of Electronic Materials (The Electrochemical Society Publisher, Electronics Division)
, vol.80-1
, pp. 242
-
-
Kimerling, L.C.1
Leamy, H.J.2
Jackson, K.A.3
-
75
-
-
0014563672
-
Field-assisted glass-metal sealing
-
G. Wallis and D. I. Pomerantz, “Field-assisted glass-metal sealing,”. Appl. Phys., vol. 40, p. 3946, 1969.
-
(1969)
Appl. Phys.
, vol.40
, pp. 3946
-
-
Wallis, G.1
Pomerantz, D.I.2
-
76
-
-
0001525820
-
Low energy metal-glass bonding
-
P. B. DeNee, “Low energy metal-glass bonding,” J. Appl. Phys., vol. 40, p. 5396, 1969.
-
(1969)
J. Appl. Phys.
, vol.40
, pp. 5396
-
-
DeNee, P.B.1
-
77
-
-
0542363152
-
Glass-related effects in field-assisted glass-metal bonding
-
IBM Rep. RC 7101, May
-
J. M. Brownlow, “Glass-related effects in field-assisted glass-metal bonding,” IBM Rep. RC 7101, May 1978.
-
(1978)
-
-
Brownlow, J.M.1
-
78
-
-
0000707524
-
Low-temperature electrostatic silicon-to-silicon seals using sputtered borosilicate glass
-
A. D. Brooks and R. P. Donovan, “Low-temperature electrostatic silicon-to-silicon seals using sputtered borosilicate glass,” J. Electrochem. Soc, vol. 119, p. 545, 1972.
-
(1972)
J. Electrochem. Soc
, vol.119
, pp. 545
-
-
Brooks, A.D.1
Donovan, R.P.2
-
80
-
-
84941465043
-
Anodic bonding
-
Stanford University Lab. Rep. for EE412
-
J. H. Jerman, J. M. Pendleton, L. N. Rhodes, C. S. Sanders, S. C. Terry, and G. V. Walsh, “Anodic bonding,” Stanford University Lab. Rep. for EE412, 1978.
-
(1978)
-
-
Jerman, J.H.1
Pendleton, J.M.2
Rhodes, L.N.3
Sanders, C.S.4
Terry, S.C.5
Walsh, G.V.6
-
81
-
-
0015728192
-
Microtool fabrication by etch pit replication
-
D. A. Kiewit, “Microtool fabrication by etch pit replication,” Rev. Sci. Instrum., vol. 44, p. 1741, 1973.
-
(1973)
Rev. Sci. Instrum.
, vol.44
, pp. 1741
-
-
Kiewit, D.A.1
-
82
-
-
0018999097
-
Solid-state processes to produce hemispherical components for inertial fusion targets
-
K. D. Wise, M. G. Robinson, and W. J. Hillegas, “Solid-state processes to produce hemispherical components for inertial fusion targets,”. Vac. Sci. Technol., vol. 18, p. 1179, 1981.
-
(1981)
Vac. Sci. Technol.
, vol.18
, pp. 1179
-
-
Wise, K.D.1
Robinson, M.G.2
Hillegas, W.J.3
-
83
-
-
0018469179
-
Fabrication of hemispherical structures using semiconductor technology for use in thermonuclear fusion research
-
K. D. Wise, T. N. Jackson, N. A. Masnari, M. G. Robinson, D. E. Solomon, G. H. Wuttke, and W. B. Rensel, “Fabrication of hemispherical structures using semiconductor technology for use in thermonuclear fusion research,”. Vac. Sci. Technol, vol. 16, p. 936, 1979.
-
(1979)
Vac. Sci. Technol
, vol.16
, pp. 936
-
-
Wise, K.D.1
Jackson, T.N.2
Masnari, N.A.3
Robinson, M.G.4
Solomon, D.E.5
Wuttke, G.H.6
Rensel, W.B.7
-
84
-
-
0000840897
-
Photosensitive field emission from silicon point arrays
-
R. N. Thomas and H. C. Nathanson, “Photosensitive field emission from silicon point arrays,” Appl.Phys. Lett., vol. 21, p. 384, 1972.
-
(1972)
Appl.Phys. Lett.
, vol.21
, pp. 384
-
-
Thomas, R.N.1
Nathanson, H.C.2
-
85
-
-
0016028306
-
Fabrication and some applications of large area silicon field emission arrays
-
R. N. Thomas, R. A. Wickstrom, D. K. Schroder, and H. C. Nathanson, “Fabrication and some applications of large area silicon field emission arrays,” Solid-State Electron., vol. 17, p. 155, 1974.
-
(1974)
Solid-State Electron.
, vol.17
, pp. 155
-
-
Thomas, R.N.1
Wickstrom, R.A.2
Schroder, D.K.3
Nathanson, H.C.4
-
86
-
-
0013404932
-
Nozzles formed in mono-crystalline silicon
-
U.S. Patent 3 921 916
-
E. Bassous, “Nozzles formed in mono-crystalline silicon,” U.S. Patent 3 921 916, 1975.
-
(1975)
-
-
Bassous, E.1
-
87
-
-
84910736385
-
Ink jet nozzle
-
U.S. Patent 4 007 464
-
E. Bassous, L. Kuhn, A. Reisman, and H. H. Taub, “Ink jet nozzle,” U.S. Patent 4 007 464, 1977.
-
(1977)
-
-
Bassous, E.1
Kuhn, L.2
Reisman, A.3
Taub, H.H.4
-
88
-
-
0001432844
-
High frequency recording with electrostatically deflected ink jets
-
R. G. Sweet, “High frequency recording with electrostatically deflected ink jets,” Rev. Sci. Instrum., vol. 36, p. 131, 1965.
-
(1965)
Rev. Sci. Instrum.
, vol.36
, pp. 131
-
-
Sweet, R.G.1
-
91
-
-
84943681553
-
Special Issue on Ink Jet Printing
-
Special Issue on Ink Jet Printing, IBM J. Res. Develop., vol. 21, 1977.
-
(1977)
IBM J. Res. Develop.
, vol.21
-
-
-
92
-
-
0018030390
-
Silicon charge electrode array for ink jet printing
-
L. Kuhn, E. Bassous, and R. Lane, “Silicon charge electrode array for ink jet printing,” IEEE Trans. Electron Devices, vol. ED-25, p. 1257, 1978.
-
(1978)
IEEE Trans. Electron Devices
, vol.ED-25
, pp. 1257
-
-
Kuhn, L.1
Bassous, E.2
Lane, R.3
-
93
-
-
0018768352
-
Fabrication of an integrated, planar silicon ink-jet structure
-
K. E. Petersen, “Fabrication of an integrated, planar silicon ink-jet structure,” IEEE Trans Electron Devices, vol. ED-26, p. 1918, 1979.
-
(1979)
IEEE Trans Electron Devices
, vol.ED-26
, pp. 1918
-
-
Petersen, K.E.1
-
94
-
-
84939372966
-
Fabrication of multiprobe miniature electrical connector
-
W. Anacker, E. Bassous, F. F. Fang, R. E. Mundie, and H. N. Yu, “Fabrication of multiprobe miniature electrical connector,” IBM Tech. Disci. Bull, vol. 19, p. 372, 1976.
-
(1976)
IBM Tech. Disci. Bull
, vol.19
, pp. 372
-
-
Anacker, W.1
Bassous, E.2
Fang, F.F.3
Mundie, R.E.4
Yu, H.N.5
-
95
-
-
84938003515
-
Pluggable connectors for Josephson device packaging
-
S. K. Lahiri, P. Geldermans, G. Kolb, J. Sokolwski, and M. J. Palmer, “Pluggable connectors for Josephson device packaging,” J. Electrochem. Soc. Extended Abstr., vol. 80-1, p. 216, 1980.
-
(1980)
J. Electrochem. Soc. Extended Abstr.
, vol.80-1
, pp. 216
-
-
Lahiri, S.K.1
Geldermans, P.2
Kolb, G.3
Sokolwski, J.4
Palmer, M.J.5
-
96
-
-
0016025627
-
Thin-film laser-to-fiber coupler
-
L. P. Boivin, “Thin-film laser-to-fiber coupler,” Appl. Opt., vol. 13, p. 391, 1974.
-
(1974)
Appl. Opt.
, vol.13
, pp. 391
-
-
Boivin, L.P.1
-
97
-
-
33646937013
-
Optical bends and rings fabricated by preferential etching
-
C. C. Tseng, D. Botez, and S. Wang, “Optical bends and rings fabricated by preferential etching,” Appl. Phys. Lett., vol. 26, p. 699, 1975.
-
(1975)
Appl. Phys. Lett.
, vol.26
, pp. 699
-
-
Tseng, C.C.1
Botez, D.2
Wang, S.3
-
98
-
-
0016509170
-
Optical waveguides fabricated by preferential etching
-
W. T. Tsang, C. C. Tseng and S. Wang, “Optical waveguides fabricated by preferential etching,” Appl. Opt., vol. 14, p. 1200, 1975.
-
(1975)
Appl. Opt.
, vol.14
, pp. 1200
-
-
Tsang, W.T.1
Tseng, C.C.2
Wang, S.3
-
99
-
-
0016483924
-
A thin-film prism as a beam separator for multimode guided waves in integrated optics
-
C. C. Tseng, W. T. Tsang, and S. Wang, “A thin-film prism as a beam separator for multimode guided waves in integrated optics,” Opt. Commun., vol. 13, p. 342, 1975.
-
(1975)
Opt. Commun.
, vol.13
, pp. 342
-
-
Tseng, C.C.1
Tsang, W.T.2
Wang, S.3
-
100
-
-
0016510124
-
Preferentially etched diffraction gratings in silicon
-
W. T. Tsang and S. Wang, “Preferentially etched diffraction gratings in silicon,” J. Appl. Phys., vol. 46, p. 2163, 1975.
-
(1975)
J. Appl. Phys.
, vol.46
, pp. 2163
-
-
Tsang, W.T.1
Wang, S.2
-
101
-
-
36749116700
-
Thin-film beam splitter and reflector for optical guided waves
-
“Thin-film beam splitter and reflector for optical guided waves,” Appl. Phys. Lett., vol. 27, p. 588, 1975.
-
(1975)
Appl. Phys. Lett.
, vol.27
, pp. 588
-
-
-
102
-
-
0017012827
-
High density multichannel optical waveguides with integrated couplers
-
J. S. Harper and P. F. Heidrich, “High density multichannel optical waveguides with integrated couplers,” Wave Electron., vol. 2, p. 369, 1976.
-
(1976)
Wave Electron.
, vol.2
, pp. 369
-
-
Harper, J.S.1
Heidrich, P.F.2
-
103
-
-
84975534738
-
Single mode optical fiber pick-off coupler
-
H. P. Hsu and A. F. Milton, “Single mode optical fiber pick-off coupler,” Appl. Opt., vol. 15, p. 2310, 1976.
-
(1976)
Appl. Opt.
, vol.15
, pp. 2310
-
-
Hsu, H.P.1
Milton, A.F.2
-
104
-
-
1842402293
-
Thin-film dye laser with etched cavity
-
C. Hu and S. Kim, “Thin-film dye laser with etched cavity,” Appl. Phys. Lett., vol. 29, p. 9, 1976.
-
(1976)
Appl. Phys. Lett.
, vol.29
, pp. 9
-
-
Hu, C.1
Kim, S.2
-
105
-
-
84975657440
-
Flip-chip approach to endfire coupling between singlemode optical fibres and channel waveguides
-
H. P. Hsu and A. F. Milton, “Flip-chip approach to endfire coupling between singlemode optical fibres and channel waveguides,” Electron. Lett., vol. 12, p. 404, 1976.
-
(1976)
Electron. Lett.
, vol.12
, pp. 404
-
-
Hsu, H.P.1
Milton, A.F.2
-
106
-
-
84975538421
-
GaAs laser array source package
-
J. D. Crow, L. D. Comerford, R. A. Laff, M. J. Brady, and J. S. Harper, “GaAs laser array source package,” Opt. Lett., vol. 1, p. 40, 1977.
-
(1977)
Opt. Lett.
, vol.1
, pp. 40
-
-
Crow, J.D.1
Comerford, L.D.2
Laff, R.A.3
Brady, M.J.4
Harper, J.S.5
-
107
-
-
0017483572
-
singlemode coupling between fibers and indiffused waveguides
-
H. P. Hsu and A. F. Milton, “singlemode coupling between fibers and indiffused waveguides,” IEEE J. Quantum Electron., vol. QE-13, p. 224, 1977.
-
(1977)
IEEE J. Quantum Electron.
, vol.QE-13
, pp. 224
-
-
Hsu, H.P.1
Milton, A.F.2
-
108
-
-
0017943234
-
Optical coupling from fibers to channel waveguides formed on silicon
-
J. T. Boyd and S. Sriram, “Optical coupling from fibers to channel waveguides formed on silicon,” Appl. Opt., vol. 17, p. 895, 1978.
-
(1978)
Appl. Opt.
, vol.17
, pp. 895
-
-
Boyd, J.T.1
Sriram, S.2
-
109
-
-
0018653907
-
Angell, A gas chromatograph air analyzer fabricated on a silicon wafer
-
S. C. Terry, J. H. Jerman, and J. B. Angell, “Angell, A gas chromatograph air analyzer fabricated on a silicon wafer,” IEEE Trans. Electron Devices, vol. ED-26, p. 1880, 1979.
-
(1979)
IEEE Trans. Electron Devices
, vol.ED-26
, pp. 1880
-
-
Terry, S.C.1
Jerman, J.H.2
Angell, J.B.3
-
110
-
-
0017988844
-
Design and construction of microminiature cyro-genic refrigerators
-
(University of Virginia, Charlottesville
-
W. A. Little, “Design and construction of microminiature cyro-genic refrigerators,” in AIP Proc. of Future Trends in Superconductive Electronics (University of Virginia, Charlottesville, 1978).
-
(1978)
AIP Proc. of Future Trends in Superconductive Electronics
-
-
Little, W.A.1
-
112
-
-
0016070207
-
Application of silicon orientation and anisotropic effects to the control of charge spreading in devices
-
K. E. Bean and J. R. Lawson, “Application of silicon orientation and anisotropic effects to the control of charge spreading in devices,” IEEE J. Solid-State Circuits, vol. SC-9, p. 111, 1974.
-
(1974)
IEEE J. Solid-State Circuits
, vol.SC-9
, pp. 111
-
-
Bean, K.E.1
Lawson, J.R.2
-
113
-
-
0016540151
-
A new C-MOS technology using anisotropic etching of silicon
-
M. J. Declerq, “A new C-MOS technology using anisotropic etching of silicon,” IEEE J. Solid-State Circuits, vol. SC-10, p. 191, 1975.
-
(1975)
IEEE J. Solid-State Circuits
, vol.SC-10
, pp. 191
-
-
Declerq, M.J.1
-
114
-
-
0016572696
-
Fabrication of a miniature 8 k-bit memory chip using electron beam exposure
-
H. N. Yu, R. H. Dennard, T.H.P. Chang, C. M. Osburn, V. Dilonardo, and H. E. Luhn, “Fabrication of a miniature 8 k-bit memory chip using electron beam exposure,” J. Vac. Sci. Technol., vol. 12, p. 1297, 1975.
-
(1975)
J. Vac. Sci. Technol.
, vol.12
, pp. 1297
-
-
Yu, H.N.1
Dennard, R.H.2
Chang, T.H.P.3
Osburn, C.M.4
Dilonardo, V.5
Luhn, H.E.6
-
116
-
-
0018029720
-
Optimization of nonplanar power MOS transistors
-
K. P. Lisiak and J. Berger, “Optimization of nonplanar power MOS transistors,” IEEE Trans. Electron Devices, vol. ED-2S, p. 1229, 1978.
-
(1978)
IEEE Trans. Electron Devices
, vol.ED-2S
, pp. 1229
-
-
Lisiak, K.P.1
Berger, J.2
-
117
-
-
84937998354
-
Air gap isolated micro-circuits-beam-lead devices
-
W. C. Rosvold, W. H. Legat, and R. L. Holden, “Air gap isolated micro-circuits-beam-lead devices,” IEEE Trans Electron Devices, vol. ED-15, p. 640, 1968.
-
(1968)
IEEE Trans Electron Devices
, vol.ED-15
, pp. 640
-
-
Rosvold, W.C.1
Legat, W.H.2
Holden, R.L.3
-
118
-
-
0018029745
-
Improved performance of GaAs microwave field-effect transistors with low inductance via-connections through the substrate
-
L. A. D'Asaro, J. V. DiLorenzo, and H. Fukui, “Improved performance of GaAs microwave field-effect transistors with low inductance via-connections through the substrate,” IEEE Trans. Electron Devices, vol. ED-25, p. 1218, 1978.
-
(1978)
IEEE Trans. Electron Devices
, vol.ED-25
, pp. 1218
-
-
D'Asaro, L.A.1
DiLorenzo, J.V.2
Fukui, H.3
-
119
-
-
0015600443
-
Epitaxial V-groove bipolar integrated circuit process
-
T. J. Rodgers and I. D. Meindl, “Epitaxial V-groove bipolar integrated circuit process,” IEEE Trans. Electron Devices, vol. ED-20, p. 226, 1973.
-
(1973)
IEEE Trans. Electron Devices
, vol.ED-20
, pp. 226
-
-
Rodgers, T.J.1
Meindl, I.D.2
-
121
-
-
0019229825
-
A novel buried grid device fabrication technology
-
B. J. Baliga, “A novel buried grid device fabrication technology,” IEEE Electron Device Lett., vol. EDL-1, p. 250, 1980.
-
(1980)
IEEE Electron Device Lett.
, vol.EDL-1
, pp. 250
-
-
Baliga, B.J.1
-
122
-
-
0018491446
-
The V-groove multijunction solar cell
-
T. I. Chappell, “The V-groove multijunction solar cell,” IEEE Trans. Electron Devices, vol. ED-26, p. 1091, 1979.
-
(1979)
IEEE Trans. Electron Devices
, vol.ED-26
, pp. 1091
-
-
Chappell, T.I.1
-
123
-
-
84989071862
-
High resolution pattern replication using soft X-rays
-
D. L. Spears and H. I. Smith, “High resolution pattern replication using soft X-rays,” Electron. Lett., vol. 8, p. 102, 1972.
-
(1972)
Electron. Lett.
, vol.8
, pp. 102
-
-
Spears, D.L.1
Smith, H.I.2
-
124
-
-
0002609065
-
X-ray lithography: A complementary technique to electron beam lithography
-
H. I. Smith, D. L. Spears, and S. E. Bernacki, “X-ray lithography: A complementary technique to electron beam lithography,” J. Vac. Sci. Technol., vol. 10, p. 913, 1973.
-
(1973)
J. Vac. Sci. Technol.
, vol.10
, pp. 913
-
-
Smith, H.I.1
Spears, D.L.2
Bernacki, S.E.3
-
125
-
-
0006873003
-
A novel method for fabrication of ultrafine metal lines by electron beams
-
T. O. Sedgwick, A. N. Broers, and B. J. Agule, “A novel method for fabrication of ultrafine metal lines by electron beams,” J. Electrochem. Soc, vol. 119, p. 1769, 1972.
-
(1972)
J. Electrochem. Soc
, vol.119
, pp. 1769
-
-
Sedgwick, T.O.1
Broers, A.N.2
Agule, B.J.3
-
126
-
-
36749110570
-
High-speed low-power X-ray lithography
-
P. V. Lenzo and E. G. Spencer, “High-speed low-power X-ray lithography,” Appl. Phys. Lett., vol. 24, p. 289, 1974.
-
(1974)
Appl. Phys. Lett.
, vol.24
, pp. 289
-
-
Lenzo, P.V.1
Spencer, E.G.2
-
127
-
-
0016557412
-
Preparation of thin windows in silicon masks for X-ray lithography
-
C. J. Schmidt, P. V. Lenzo, and E. G. Spencer, “Preparation of thin windows in silicon masks for X-ray lithography,” J. Appl. Phys, vol. 46, p. 4080, 1975.
-
(1975)
J. Appl. Phys
, vol.46
, pp. 4080
-
-
Schmidt, C.J.1
Lenzo, P.V.2
Spencer, E.G.3
-
128
-
-
84943680056
-
Electron beam step and repeat proximity printing
-
(Seattle, WA, May
-
H. Bohlen, J. Greschner, W. Kulcke, and P. Nehmiz, “Electron beam step and repeat proximity printing,” in Proc. Electrochem. Soc. Meet. (Seattle, WA, May 1978).
-
(1978)
Proc. Electrochem. Soc. Meet.
-
-
Bohlen, H.1
Greschner, J.2
Kulcke, W.3
Nehmiz, P.4
-
129
-
-
36849097152
-
Measurement of strains at Si-Si02 interface
-
R. J. Jaccodine and W. A. Schlegel, “Measurement of strains at Si-Si02 interface,”. Appl. Phys., vol. 37, p. 2429, 1966.
-
(1966)
Appl. Phys.
, vol.37
, pp. 2429
-
-
Jaccodine, R.J.1
Schlegel, W.A.2
-
130
-
-
0038517358
-
Buckling of thermally grown SiO2 thin films
-
C. W. Wilmsen, E. G. Thompson, and G. H. Meissner, “Buckling of thermally grown SiO2 thin films,” IEEE Trans. Electron Devices, vol. ED-19, p. 122, 1972.
-
(1972)
IEEE Trans. Electron Devices
, vol.ED-19
, pp. 122
-
-
Wilmsen, C.W.1
Thompson, E.G.2
Meissner, G.H.3
-
131
-
-
0017002693
-
High transmission X-ray masks for lithographic applications
-
E. Bassous, R. Feder, E. Spiller, and J. Topalian, “High transmission X-ray masks for lithographic applications,” Solid-State Technol., vol. 19, p. 55, 1976.
-
(1976)
Solid-State Technol.
, vol.19
, pp. 55
-
-
Bassous, E.1
Feder, R.2
Spiller, E.3
Topalian, J.4
-
132
-
-
0017017146
-
A backside illuminated 400 X 400 charge-coupled device imager
-
G. A. Antcliffe, L. J. Hornbeck, W. W. Chan, J. W. Walker, W. C. Rhines, and D. R. Collins, “A backside illuminated 400 X 400 charge-coupled device imager,” IEEE Trans. Electron Devices, vol. ED-23, p. 1225, 1976.
-
(1976)
IEEE Trans. Electron Devices
, vol.ED-23
, pp. 1225
-
-
Antcliffe, G.A.1
Hornbeck, L.J.2
Chan, W.W.3
Walker, J.W.4
Rhines, W.C.5
Collins, D.R.6
-
133
-
-
0019280717
-
A monolithic thermopile detector fabricated using integrated-circuit technology
-
(Washington, DC)
-
G. R. Lahiji and K. D. Wise, “A monolithic thermopile detector fabricated using integrated-circuit technology,” in Proc. Int. Electron Devices Meet. (Washington, DC), p. 676, 1980.
-
(1980)
Proc. Int. Electron Devices Meet.
, pp. 676
-
-
Lahiji, G.R.1
Wise, K.D.2
-
134
-
-
0001163211
-
Josephson tunnelling through locally thinned silicon
-
C. L. Huang and T. van Duzer, “Josephson tunnelling through locally thinned silicon,” Appl. Phys. Lett., vol. 25, p. 753, 1974.
-
(1974)
Appl. Phys. Lett.
, vol.25
, pp. 753
-
-
Huang, C.L.1
van Duzer, T.2
-
135
-
-
0016483427
-
Single-crystal silicon-barrier Josephson junctions
-
“Single-crystal silicon-barrier Josephson junctions,” IEEE Trans. Magn., vol. MAG-11, p. 766, 1975.
-
(1975)
IEEE Trans. Magn.
, vol.MAG-11
, pp. 766
-
-
-
136
-
-
0016962328
-
Schottky diodes and other devices on thin silicon membranes
-
“Schottky diodes and other devices on thin silicon membranes,” IEEE Trans. Electron Devices, vol. ED-23, p. 579, 1976.
-
(1976)
IEEE Trans. Electron Devices
, vol.ED-23
, pp. 579
-
-
-
137
-
-
0016924581
-
Thin epitaxial silicon for dE/dx detectors
-
C. J. Maggiore, P. D. Goldstone, G. R. Gruhn, N. Jarmie, S. C. Stotlar, and H. V. Dehaven, “Thin epitaxial silicon for dE/dx detectors,” IEEE Trans. Nucl. Sci., vol. NS-24, p. 104, 1977.
-
(1977)
IEEE Trans. Nucl. Sci.
, vol.NS-24
, pp. 104
-
-
Maggiore, C.J.1
Goldstone, P.D.2
Gruhn, G.R.3
Jarmie, N.4
Stotlar, S.C.5
Dehaven, H.V.6
-
138
-
-
0942269812
-
Electromechanical devices utilizing thin Si diaphragms
-
H. Guckel, S. Larsen, M. G. Lagally, G. Moore, J. B. Miller, and J. D. Wiley, “Electromechanical devices utilizing thin Si diaphragms,” Appl. Phys. Lett., vol. 31, p. 618, 1977.
-
(1977)
Appl. Phys. Lett.
, vol.31
, pp. 618
-
-
Guckel, H.1
Larsen, S.2
Lagally, M.G.3
Moore, G.4
Miller, J.B.5
Wiley, J.D.6
-
139
-
-
0000392980
-
Silicon diffused-element piezoresistive diaphragms
-
O. N. Tufte, P. W. Chapman, and D. Long, “Silicon diffused-element piezoresistive diaphragms,” J. Appl. Phys., vol. 33, p. 3322, 1962.
-
(1962)
J. Appl. Phys.
, vol.33
, pp. 3322
-
-
Tufte, O.N.1
Chapman, P.W.2
Long, D.3
-
140
-
-
0015726078
-
Miniature pressure transducers with silicon diaphragm
-
A.C.M. Gieles and G.H.J. Somers, “Miniature pressure transducers with silicon diaphragm,” Philips Tech. Rev., vol. 33, p. 14, 1973.
-
(1973)
Philips Tech. Rev.
, vol.33
, pp. 14
-
-
Gieles, A.C.M.1
Somers, G.H.J.2
-
141
-
-
0015588568
-
An IC piezoresistive pressure sensor for biomedical instrumentation
-
Samaun, K. D. Wise, and J. B. Angell, “An IC piezoresistive pressure sensor for biomedical instrumentation,” IEEE Trans Biomed. Eng., vol. BME-20, p. 101, 1973.
-
(1973)
IEEE Trans Biomed. Eng.
, vol.BME-20
, pp. 101
-
-
Samaun, S.1
Wise, K.D.2
Angell, J.B.3
-
142
-
-
0015640144
-
A microminiature solid-state capacitive blood pressure transducer with improved sensitivity
-
W. D. Frobenius, A. C. Sanderson, and H. C. Nathanson, “A microminiature solid-state capacitive blood pressure transducer with improved sensitivity,” IEEE Trans Biomed. Eng., vol. BME-20, p. 312, 1973.
-
(1973)
IEEE Trans Biomed. Eng.
, vol.BME-20
, pp. 312
-
-
Frobenius, W.D.1
Sanderson, A.C.2
Nathanson, H.C.3
-
143
-
-
0018753690
-
Pressure sensitivity in anisotropi-cally etched thin-diaphragm pressure sensors
-
S. K. Clark and K. D. Wise, “Pressure sensitivity in anisotropi-cally etched thin-diaphragm pressure sensors,” IEEE Trans. Electron Devices, vol. ED-26, p. 1887, 1979.
-
(1979)
IEEE Trans. Electron Devices
, vol.ED-26
, pp. 1887
-
-
Clark, S.K.1
Wise, K.D.2
-
144
-
-
0018752437
-
Integrated signal conditioning for silicon pressure sensors
-
J. M. Borky and K. D. Wise, “Integrated signal conditioning for silicon pressure sensors,” IEEE Trans. Electron Devices, vol. ED-26, p. 1906, 1979.
-
(1979)
IEEE Trans. Electron Devices
, vol.ED-26
, pp. 1906
-
-
Borky, J.M.1
Wise, K.D.2
-
145
-
-
0018653908
-
Development of a miniature pressure transducer for biomedical applications
-
W. H. Ko, J. Hynecek, and S. F. Boettcher, “Development of a miniature pressure transducer for biomedical applications,” IEEE Trans. Electron Devices, vol. ED-26, p. 1896, 1979.
-
(1979)
IEEE Trans. Electron Devices
, vol.ED-26
, pp. 1896
-
-
Ko, W.H.1
Hynecek, J.2
Boettcher, S.F.3
-
146
-
-
0019019666
-
A monolithic capacitive pressure sensor with pulse-period output
-
C. S. Sander, J. W. Knutti, and J. D. Meindl, “A monolithic capacitive pressure sensor with pulse-period output,” IEEE Trans. Electron Devices, vol. ED-27, p. 927, 1980.
-
(1980)
IEEE Trans. Electron Devices
, vol.ED-27
, pp. 927
-
-
Sander, C.S.1
Knutti, J.W.2
Meindl, J.D.3
-
147
-
-
84943681066
-
Piezoresistive force sensors for observing muscle contraction
-
H. C. Tuan, J. S. Yanacopoulos, and T. A. Nunn, “Piezoresistive force sensors for observing muscle contraction,” Stanford Univ. Electron. Res. Rev., p. 102, 1975.
-
(1975)
Stanford Univ. Electron. Res. Rev.
, pp. 102
-
-
Tuan, H.C.1
Yanacopoulos, J.S.2
Nunn, T.A.3
-
148
-
-
0041894265
-
The resonistor: A frequency selective device utilizing the mechanical resonance of a silicon substrate
-
R. J. Wilfinger, P. H. Bardell, and D. S. Chhabra, “The resonistor: A frequency selective device utilizing the mechanical resonance of a silicon substrate,” IBM J. Res. Develop., vol. 12, p. 113, 1968.
-
(1968)
IBM J. Res. Develop.
, vol.12
, pp. 113
-
-
Wilfinger, R.J.1
Bardell, P.H.2
Chhabra, D.S.3
-
149
-
-
0019063742
-
Silicon torsional scanning mirror
-
K. E. Petersen, “Silicon torsional scanning mirror,” IBM J. Res. Develop., vol. 24, p. 631, 1980.
-
(1980)
IBM J. Res. Develop.
, vol.24
, pp. 631
-
-
Petersen, K.E.1
-
150
-
-
84943677325
-
-
Englewood Cliffs, NJ: Prentice-Hall
-
A. Higdon and W. D. Stiles, Engineering Mechanics, Volume II: Dynamics. Englewood Cliffs, NJ: Prentice-Hall, 1961, p. 555.
-
(1961)
Engineering Mechanics, Volume II: Dynamics
, pp. 555
-
-
Higdon, A.1
Stiles, W.D.2
-
152
-
-
0001447155
-
Miniaturization of tuning forks
-
W. E. Newell, “Miniaturization of tuning forks,” Science, vol. 161, p. 1320, 1968.
-
(1968)
Science
, vol.161
, pp. 1320
-
-
Newell, W.E.1
-
154
-
-
84975543918
-
Dynamic mirror distortions in optical scanning
-
P. J. Brosens, “Dynamic mirror distortions in optical scanning,” Appl. Opt., vol. 11, p. 2987, 1972.
-
(1972)
Appl. Opt.
, vol.11
, pp. 2987
-
-
Brosens, P.J.1
-
156
-
-
0342694628
-
Laser scanning systems
-
M. Ross. Ed. New York: Academic Press
-
L. Beiser, “Laser scanning systems,” in Laser Applications Volume 2, M. Ross. Ed. New York: Academic Press, 1974.
-
(1974)
Laser Applications
, vol.2
-
-
Beiser, L.1
-
157
-
-
34247495690
-
A resonant-gate silicon surface transistor with high-Q bandpass properties
-
H. C. Nathanson and R. A. Wickstrom, “A resonant-gate silicon surface transistor with high-Q bandpass properties,” Appl. Phys. Lett., vol. 7, p. 84, 1965.
-
(1965)
Appl. Phys. Lett.
, vol.7
, pp. 84
-
-
Nathanson, H.C.1
Wickstrom, R.A.2
-
158
-
-
84925175290
-
The resonant gate transistor
-
H. C. Nathanson, W. E. Newell, R. A. Wickstrom, and J. R. Davis, Jr., “The resonant gate transistor,” IEEE Trans. Electron Devices, vol. ED-14, p. 117, 1967.
-
(1967)
IEEE Trans. Electron Devices
, vol.ED-14
, pp. 117
-
-
Nathanson, H.C.1
Newell, W.E.2
Wickstrom, R.A.3
Davis, J.R.4
-
159
-
-
0014867856
-
A new Schlieren light valve for television projection
-
J. A. van Raalte, “A new Schlieren light valve for television projection,” Appl. Opt., vol. 9, p. 2225, 1970.
-
(1970)
Appl. Opt.
, vol.9
, pp. 2225
-
-
van Raalte, J.A.1
-
160
-
-
0014812146
-
A coherent optical computer system using the membrane light modulator
-
K. Preston, Jr., “A coherent optical computer system using the membrane light modulator,” IEEE Trans. Aerosp. Electron. Syst., vol. AES-6, p. 458, 1970.
-
(1970)
IEEE Trans. Aerosp. Electron. Syst.
, vol.AES-6
, pp. 458
-
-
Preston, K.1
-
161
-
-
0015599943
-
A membrane page composer
-
L. S. Cosentino and W. C. Stewart, “A membrane page composer,” RCA Rev., vol. 34, p. 45, 1973.
-
(1973)
RCA Rev.
, vol.34
, pp. 45
-
-
Cosentino, L.S.1
Stewart, W.C.2
-
162
-
-
85095898960
-
Performance characteristics of the deformagraphic storage display tube (DSDT)
-
presented at the IEEE Intercom, Mar.
-
B. J. Ross and E. T. Kozol, “Performance characteristics of the deformagraphic storage display tube (DSDT),” presented at the IEEE Intercom, Mar. 1973.
-
(1973)
-
-
Ross, B.J.1
Kozol, E.T.2
-
163
-
-
36749117443
-
An aluminum/SiO, silicon on sapphire light valve matrix for projection displays
-
J. Guldberg, H. C. Nathanson, D. L. Balthis, and A. S. Jensen, “An aluminum/SiO, silicon on sapphire light valve matrix for projection displays,” Appl. Phys. Lett., vol. 26, p. 391, 1975.
-
(1975)
Appl. Phys. Lett.
, vol.26
, pp. 391
-
-
Guldberg, J.1
Nathanson, H.C.2
Balthis, D.L.3
Jensen, A.S.4
-
164
-
-
0016548696
-
The mirror matrix tube: A novel light valve for projection displays
-
R. N. Thomas, J. Guldberg, H. C. Nathanson, and P. R. Malm-berg, “The mirror matrix tube: A novel light valve for projection displays,” IEEE Trans. Electron Devices, vol. ED-22, p. 765, 1975.
-
(1975)
IEEE Trans. Electron Devices
, vol.ED-22
, pp. 765
-
-
Thomas, R.N.1
Guldberg, J.2
Nathanson, H.C.3
Malm-berg, P.R.4
-
165
-
-
0001450286
-
Micromechanical light modulator array fabricated on silicon
-
K. E. Petersen, “Micromechanical light modulator array fabricated on silicon,” Appl. Phys Lett., vol. 31, p. 521, 1977.
-
(1977)
Appl. Phys Lett.
, vol.31
, pp. 521
-
-
Petersen, K.E.1
-
166
-
-
0018029736
-
Dynamic micromechanics on silicon: Techniques and devices
-
“Dynamic micromechanics on silicon: Techniques and devices,” IEEE Trans Electron Devices, vol. ED-25, p. 1241, 1978.
-
(1978)
IEEE Trans Electron Devices
, vol.ED-25
, pp. 1241
-
-
-
168
-
-
0018541427
-
Young's modulus measurements of thin films using micromechanics
-
K. E. Petersen and C. R. Guarnieri, “Young's modulus measurements of thin films using micromechanics,” J. Appl. Phys., vol. 50, p. 6761, 1979.
-
(1979)
J. Appl. Phys.
, vol.50
, pp. 6761
-
-
Petersen, K.E.1
Guarnieri, C.R.2
-
169
-
-
0011480978
-
Mechanical strength of thin films of metals
-
J. W. Beams, J. B. Freazeale, and W. L. Bart, “Mechanical strength of thin films of metals,” Phys. Rev., vol. 100, p. 1657, 1955.
-
(1955)
Phys. Rev.
, vol.100
, pp. 1657
-
-
Beams, J.W.1
Freazeale, J.B.2
Bart, W.L.3
-
170
-
-
0000624490
-
Tensile properties of thin, evaporated gold films
-
C. A. Neugebauer, “Tensile properties of thin, evaporated gold films,” J. Appl. Phys., vol 31, p. 1096, 1960.
-
(1960)
J. Appl. Phys.
, vol.31
, pp. 1096
-
-
Neugebauer, C.A.1
-
171
-
-
36849116923
-
Mechanical properties of vacuum-deposited gold
-
J. M. Blakely, “Mechanical properties of vacuum-deposited gold,” J Appl. Phys., vol. 35, p. 1756, 1964.
-
(1964)
J Appl. Phys.
, vol.35
, pp. 1756
-
-
Blakely, J.M.1
-
172
-
-
0001413452
-
Miniature cantilever beams fabricated by anisotropic etching of silicon
-
R. D. Jolly and R. S. Muller, “Miniature cantilever beams fabricated by anisotropic etching of silicon,” J. Electrochem. Soc, vol. 127, p. 2750, 1980.
-
(1980)
J. Electrochem. Soc
, vol.127
, pp. 2750
-
-
Jolly, R.D.1
Muller, R.S.2
-
173
-
-
0004307138
-
-
C. J. Smithels, Ed. London, England: Butterworths
-
Metals Reference Handbook, C. J. Smithels, Ed. London, England: Butterworths, 1976.
-
(1976)
Metals Reference Handbook
-
-
-
174
-
-
0014752714
-
Insulating materials for semiconductor surfaces
-
R. E. McMillan and R. P. Misra, “Insulating materials for semiconductor surfaces,” IEEE Trans. Elec. Insulat., vol. EI-5, p. 10, 1970.
-
(1970)
IEEE Trans. Elec. Insulat.
, vol.EI-5
, pp. 10
-
-
McMillan, R.E.1
Misra, R.P.2
-
177
-
-
84943678943
-
-
Air Force Tech. Rep. AFAL-TR-77-152, Air Force Avionics Lab., Wright-Patterson Air Force Base, OH, 45433
-
Air Force Tech. Rep. AFAL-TR-77-152, Air Force Avionics Lab., Wright-Patterson Air Force Base, OH, 45433.
-
-
-
-
178
-
-
84910694397
-
Silicon cantilever beam accelerometer utilizing a PI-FET capacitive transducer
-
P. Chen, R. S. Muller, T. Shiosaki, and R. M. White, “Silicon cantilever beam accelerometer utilizing a PI-FET capacitive transducer,” IEEE Trans. Electron Devices, vol. ED-26, p. 1857, 1979.
-
(1979)
IEEE Trans. Electron Devices
, vol.ED-26
, pp. 1857
-
-
Chen, P.1
Muller, R.S.2
Shiosaki, T.3
White, R.M.4
-
179
-
-
84901974088
-
A planar processed PI-FET accelerometer
-
(Washington, DC, Dec.
-
P. Chen, R. Jolly, G. Halac, R. S. Muller, and R. M. White, “A planar processed PI-FET accelerometer,” in Proc. Int. Electron Devices Meet. (Washington, DC, Dec. 1980), p. 848.
-
(1980)
Proc. Int. Electron Devices Meet.
, pp. 848
-
-
Chen, P.1
Jolly, R.2
Halac, G.3
Muller, R.S.4
White, R.M.5
-
180
-
-
0019912592
-
Micromechanical accelerometer integrated with MOS detection circuitry
-
Jan.
-
K. E. Petersen, A. Shartel, and N. Raley, “Micromechanical accelerometer integrated with MOS detection circuitry,” IEEE Trans. Electron Devices, vol. ED-29, p. 23, Jan. 1982.
-
(1982)
IEEE Trans. Electron Devices
, vol.ED-29
, pp. 23
-
-
Petersen, K.E.1
Shartel, A.2
Raley, N.3
-
181
-
-
0015282064
-
Microminiature ganged threshold accelerom-eters compatible with integrated circuit technology
-
W. D. Frobenius, S. A. Zeitman, M. H. White, D. D. O'Sullivan, and R. G. Hamel, “Microminiature ganged threshold accelerom-eters compatible with integrated circuit technology,” IEEE Trans. Electron Devices, vol. ED-19, p. 37, 1972.
-
(1972)
IEEE Trans. Electron Devices
, vol.ED-19
, pp. 37
-
-
Frobenius, W.D.1
Zeitman, S.A.2
White, M.H.3
O'Sullivan, D.D.4
Hamel, R.G.5
-
182
-
-
0018496252
-
Micromechanical membrane switches on silicon
-
K. E. Petersen, “Micromechanical membrane switches on silicon,” IBM J. Res. Develop., vol. 23, p. 376, 1979.
-
(1979)
IBM J. Res. Develop.
, vol.23
, pp. 376
-
-
Petersen, K.E.1
-
183
-
-
84943678598
-
Thermal printing applications and technology
-
presented at the Invitational Computer Conf., Sept.
-
B. Boles, “Thermal printing applications and technology,” presented at the Invitational Computer Conf., Sept. 1979.
-
(1979)
-
-
Boles, B.1
-
185
-
-
0003057212
-
Dielectric isolation: Comprehensive, current and future
-
K. E. Bean and W. R. Runyan, “Dielectric isolation: Comprehensive, current and future,” J. Electrochem. Soc, vol. 124, p. 5c, 1977.
-
(1977)
J. Electrochem. Soc
, vol.124
, pp. 5c
-
-
Bean, K.E.1
Runyan, W.R.2
-
186
-
-
0019620166
-
Chemical vapor deposition applications in microelectronics processing
-
K. E. Bean, “Chemical vapor deposition applications in microelectronics processing,” Thin Solid Films, vol. 83, p. 173, 1981.
-
(1981)
Thin Solid Films
, vol.83
, pp. 173
-
-
Bean, K.E.1
-
187
-
-
2342529302
-
Topologically structured thin films in semiconductor device operation
-
New York: Academic Press
-
H. C. Nathanson and J. Guldberg, “Topologically structured thin films in semiconductor device operation,” in Physics of Thin Films Volume 8. New York: Academic Press, 1975.
-
(1975)
Physics of Thin Films
, vol.8
-
-
Nathanson, H.C.1
Guldberg, J.2
-
188
-
-
84943680211
-
System designers fish for microcomputer-compatible sensors and transducers
-
Mar. 20
-
“System designers fish for microcomputer-compatible sensors and transducers,” EDN Mag., p. 122, Mar. 20, 1980.
-
(1980)
EDN Mag.
, pp. 122
-
-
-
189
-
-
84943681849
-
Sensing the real world with low cost silicon
-
Nov. 6
-
“Sensing the real world with low cost silicon,” Electronics, p. 113, Nov. 6, 1980.
-
(1980)
Electronics
, pp. 113
-
-
-
190
-
-
0019875133
-
Ultraminiature mechanics
-
Jan. 8
-
“Ultraminiature mechanics,” Machine Des., p. 112, Jan. 8, 1981.
-
(1981)
Machine Des.
, pp. 112
-
-
|