Threshold-Voltage Analysis of Short- and Narrow-Channel MOSFET's by Three-Dimensional Computer Simulation

IEEE Transactions on Electron Devices

Volumn 29, Issue 5, 1982, Pages 870-876

  Kasai, Ryota ^a   Yokoyama, Kiyoyuki ^a   Yoshii, Akira ^a   Sudo, Tsuneta ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

EID: 0020126868     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1982.20792     Document Type: Article

References (12)

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4. E.M. Buturla, P.E. Cottrell, B.M. Grossman, K.A. Salsburg, M.B. Lawlor, and C.T. Mcmullen, “Three-dimensional finite element simulation of semiconductor devices,” in ISSCC 1980 Tech. Dig., pp. 76–77, 1980.
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9. K. Yokoyama, A. Yoshii, and S. Horiguchi, “Threshold sensitivity minimization of short-channel MOSFET's by computer simulation,” IEEE Trans. Electron Devices, vol. ED-27, pp. 1509–1514, Aug. 1980.
10. R. Kasai and T. Kimura, “Two-dimensional structure analysis on short-channel MOS transistors,” Trans. IECE Japan, vol. J62-C, pp. 389–396, June 1979.
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12. E.C. Douglas and A.G.F. Dingwall, “Ion implantation for threshold control in COSMOS circuits,” IEEE Trans. Electron Devices, vol. ED-21, pp. 324–331, June 1974.