TEMPERATURE DEPENDENCE OF THE I-V CHARACTERISTICS OF MODULATION-DOPED FETs.

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 1, Issue 2, 1982, Pages 190-195

  Valois, A J ^a   Robinson, G Y ^a   Lee, K ^a   Shur, M S ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAMS - APPLICATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS - GROWTH; SEMICONDUCTING GALLIUM COMPOUNDS - GROWTH; SEMICONDUCTOR DEVICES - HETEROJUNCTIONS;

MODULATION-DOPING; MOLECULAR BEAM EPITAXY;

TRANSISTORS, FIELD EFFECT;

EID: 0020115485     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582485     Document Type: Conference Paper

References (12)