Determination of spatial surface state density distribution in MOS and SIMOS transistors after channel hot electron injection

Electronics Letters

Volumn 18, Issue 9, 1982, Pages 372-374

  Maes, H E ^a   Groeseneken, G ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Metaloxide semiconductor structures and devices; Semiconductor devices and materials

Indexed keywords

SEMICONDUCTOR DEVICES, MOS;

SIMOS; STACKED GATE INJECTION MOS;

TRANSISTORS, FIELD EFFECT;

EID: 0020114405     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19820255     Document Type: Article

References (8)

1. FROHMAN-BENTCHKOWSKY, D.: ‘Non volatile semiconductor memories’. IEDM 1981, pp. 14-17
2. NING, T. H.: ‘Hot-electron emission from silicon into silicon dioxide’, Solid-State Electron., 1978, 21, pp. 273-282
3. COTTRELL, P. E., TROUTMAN, R. R., and NING, T. H.: ‘Hot-electron emission in n-channel IGFETs’, IEEE J. Solid-State Circuits, 1979, SC-14, pp. 442-455
4. MATSUMOTO, H., SAWADA, K., ASAI, S., HIRAYAMA, M., and NAGASAWA, K.: ‘Effect of long-term stress on IGFET degradations due to hot-electron trapping’, IEEE Trans., 1981, ED-28, pp. 923-928
5. BRUGLER, J. S., and JESPERS, P. G. A.: ‘Charge pumping in MOS devices’, IEEE Trans., 1969, ED-16, pp. 297-302
6. ELLIOT, A. B. M.: ‘The use of charge pumping currents to measure surface state densities in MOS transistors’, Solid-State Electron., 1976, 19, pp. 241-247
7. EITAN, B., and FROHMAN-BENTCHKOWSKY, D.: ‘Hot-electron injection into the oxide in n-channel MOS-devices’, IEEE Trans., 1981, ED-28, pp. 328-340
8. TANAKA, S., and ISHIKAWA, M.: ‘One-dimensional writing model of n-channel floating gate ionization-injection MOS (FIMOS)’, IEEE Trans., 1981, ED-28, pp. 1190-1197