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Journal of Applied Physics

Volumn 53, Issue 4, 1982, Pages 2923-2938

A kinetic study of the plasma-etching process. I. A model for the etching of Si and SiO2 in CnFm/H2 and C nFm/O2 plasmas

(1) Kushner, M J a

a SANDIA NATIONAL LABORATORIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PLASMAS - APPLICATIONS; SEMICONDUCTING SILICON - ETCHING; SILICA - ETCHING;

ETCHING;

EID: 0020114383 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.331074 Document Type: Article

Times cited : (136)

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