Properties of Interconnection on Silicon, Sapphire, and Semi-Insulating Gallium Arsenide Substrates

IEEE Transactions on Electron Devices

Volumn 29, Issue 4, 1982, Pages 639-644

  Yuan, Han Tzong ^a   Lin, Yung Tao ^a   Chiang, Shang Yi ^b  

^a TEXAS INSTRUMENTS   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUIT MANUFACTURE; SEMICONDUCTOR DEVICE MANUFACTURE - SILICON ON SAPPHIRE TECHNOLOGY;

INTEGRATED CIRCUITS;

EID: 0020113495     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1982.20756     Document Type: Article

References (11)

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9. R. E. Neidert, “Dielectric constant of semi-insulating gallium arsenide,” Electron. Lett., vol. 16, no. 7, p. 244, Mar. 1980.
10. Y. H. Ku, Transient Circuit Analysis. Princeton, NJ: Van Nostrand, 1961, ch. 10.
11. P. M. Chirlian, Integrated and Active Network Analysis and Synthesis. Englewood Cliffs, NJ: Prentice-Hall, 1967, ch. 4.