Fabrication of High-Performance LDDFET's with Oxide Sidewall-Spacer Technology

IEEE Transactions on Electron Devices

Volumn 29, Issue 4, 1982, Pages 590-596

  Tsang, Paul J ^a   Ogura, Seiki ^a   Walker, William W ^a   Shepard, Joseph F ^a   Critchlow, Dale L ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

EID: 0020112866     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1982.20748     Document Type: Article

References (13)

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2. K. Saito, T. Morose, S. Sato, and U. Harada, “A new short channel MOSFET with lightly doped drain,” Denshi Tsushin Rengo Taikai (in Japanese), p. 220, Apr. 1978.
3. S. Ogura, P. J. Tsang, W. W. Walker, D. L. Critchlow, and J. F. Shepard, “Design and characteristics of the lightly doped drain-source (LDD) insulated gate field-effect transistor,” IEEE Trans. Electron Devices, vol. ED-27, pp. 1359–1367, 1980.
4. J. Riseman, U.S. Patent 4 234 362, November 18, 1980.
5. P. J. Tsang, J. F. Shepard, J. Lechaton, and S. Ogura, “Characterization of sidewall-spacers formed by anisotropic RIE,” J. Electrochem. Soc., vol. 128, p. 238C, 1981.
6. W. R. Hunter, T. C. Holloway, P. K. Chatterjee, and A. F. Tasch, Jr., “New edge-defined vertical-etch approaches for submicrometer MOSFET fabrication,” in IEDM Techn. Dig., pp. 764–766, 1980.
7. L. M. Ephrath, J. Electrochem. Soc., vol. 124, p. 284C, 1977.
8. W. H.-L. Ma, “Plasma resist image stabilization technique (PRIST),” in IEDM Tech. Dig., pp. 574–575, 1980.
9. N. Hosokawa, R. Matsuzaki, and T. Asamaki, in Proc. 6th Int. Vacuum Congr. 1974, “RF sputter etching by fluoro-chloro-hydrocarbon gases,” Japan., J. Appl. Phys., suppl. 2, pt. I, pp. 435–438, 1974.
10. J.G.J. Chern, P. Chang, R. F. Motta, and N. Godinho, “A new method to determine MOSFET channel length,” IEEE Electron Devices Lett., vol. EDL-1, pp. 170–173, 1980
11. also see K. Terada and H. Muta, “A new method to determine effective MOSFET channel length,” Japan. J. Appl. Phys., vol. 18, pp. 953–959, 1979.
12. S. A. Abbas and R. C. Dockerty, “Hot-carrier instability in IGFET'S,” Appl. Phys. Lett., vol. 27, pp. 147–148, 1975.
13. S. Ogura, P. J. Tsang, W. W. Walker, D. L. Critchlow, and J. F. Shepard, “Elimination of hot electron gate current by the lightly doped source-drain structure,” in IEDM Tech. Dig., pp. 651–654, 1981.