The Graded Bandgap Multilayer Avalanche Photodiode: A New Low-Noise Detector

IEEE Electron Device Letters

Volumn 3, Issue 3, 1982, Pages 71-73

  Williams, G F ^a   Capasso, F ^a   Tsang, W T ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, PHOTODIODE;

EID: 0020103265     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1982.25483     Document Type: Article

References (8)

1. R. J. McIntyre, “Multiplication noise in uniform avalanche diodes,” IEEE Trans. Electron. Dev., ED-13, no. 1, pp. 164-168, 1966.
2. F. Capasso, W. J. Tsang, A. L. Hutchinson, and G. F. Williams, “Enhancement of electron impact ionization in a superlattice: a new avalanche photodioce with a large ionization rates ratio,” Appl. Phys. Lett, vol. 40, no. 1, pp. 38-40, 1982.
3. F. Capasso, W. T. Tsang, A. L. Hutchinson and P. W. Foy, “The graded bandgap avalanche diode: a new MBE structure with a large ionization rates ratio,” Proc. 1981 Symp. on GaAs and Related Compounds, to be published.
4. H. Kroemer, Heterojunctions and Metal-Semiconductor Junctions, A. G. Milnes and D. L. Feucht, eds. pp. 28-29, NY: Academic Press, 1972.
5. T. P. Pearsall, “Heterojunction photodiode of the avalanche type,” U.S. Patent 4,231,049.
6. M. Naganuma, Y. Suzuki and H. Okamoto, “Photoluminescence of GaSb-AlSb supeilattices grown by MBE,” Proc. 1981 Symp. on GaAs and Related Compounds, to be published.
7. C. Hildebrand, W. Kuebart, K. W. Benz and M. H. Pilkuhn, “Gax1-x AlxSb avalanche photodiodes; resonant impact ionization with very high ratio of ionization coefficients,” IEEE J. Quantum Electron., QE-17, no. 2, pp. 284-288, 1981.
8. T. P. Pearsall, “Impact ionization rates for electrons and holes in Ga0.47 In0.53 As,” Appl. Phys. Lett., vol. 36, no. 3, pp. 218-220, 1980.