Quadruply Self-Aligned Stacked High-Capacitance RAM Using Ta205 High-Density VLSI Dynamic Memory

IEEE Transactions on Electron Devices

Volumn 29, Issue 3, 1982, Pages 368-376

  Ohta, Kuniichi ^a   Yamada, Kunio ^a   Shimizu, Kyozo ^a   Tarui, Yasuo ^b  

^a NEC CORPORATION   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, SEMICONDUCTOR;

EID: 0020101518     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1982.20711     Document Type: Article

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