Comparison of two 1 f noise models in MOSFETs

Solid State Electronics

Volumn 25, Issue 3, 1982, Pages 213-217

  Park, H S ^a   van der Ziel, A ^a   Liu, S T ^b  

^a UNIVERSITY OF MINNESOTA   (United States)

^b HONEYWELL TECHNOLOGY CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICE MANUFACTURE - SILICON ON SAPPHIRE TECHNOLOGY; SEMICONDUCTOR DEVICES, MOS;

TRANSISTORS, FIELD EFFECT;

EID: 0020098493     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(82)90110-1     Document Type: Article

References (17)

1. Characterization of low 1/f noise in MOS transistors
2. Theory and experiments on surface 1/f noise
3. Carrier fluctuation noise in a MOSFET channel due to traps in the oxide