Choice between fets or bipolar transistors and optimization of their working points in low noise preamplifiers for fast pulse processing. theory and experimental results

IEEE Transactions on Nuclear Science

Volumn 30, Issue 1, 1983, Pages 319-323

  Manfredi, P F ^c  

^a POLITECNICO DI MILANO   (Italy)

^b UNIVERSITÉ PARIS SUD   (France)

^c UNIVERSITY OF PAVIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, BIPOLAR; TRANSISTORS, FIELD EFFECT;

SIGNAL PROCESSING;

EID: 0020088690     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1983.4332278     Document Type: Article

References (7)

1. P.F.Manfredi, D.Misler, V.Varoli - Proceedings of the Topical Seminar on “Interactions of Elementary Particles with Nuclei.” Trieste, Sept. 1970, 275
2. E.Heijne - Proceedings of the Fermilab Workshop on Silicon Detectors for High Energy Physics, Oct.1981, 1
3. P.D’Angelo, A.Hrisoho, P.Jarron, P.F.Manfredi, J.Poinsignon - Nuclear Instruments and Methods, 193 (1982), 533
4. A.Hrisoho - Nuclear Instruments and Methods, 185 (1981), 207
5. J.E.Goell - Bell System Technical Journal, 53 (1974), 1771
6. R.B.Fair - IEEE Transactions on Nuclear Science, NS-23, 1 (1976), 218
7. V.Radeka - Preceedings of the Fermilab Workshop on Silicon Detectors for High Energy Physics, Oct 1981, 26