SCOPUS 정보 검색 플랫폼

Volumn 53, Issue 1, 1982, Pages 744-748

GaAs-AlGaAs tunnel junctions for multigap cascade solar cells

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

ALUMINUM GALLIUM ARSENIDE;

SOLAR CELLS;

EID: 0019926780 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.329940 Document Type: Article

Times cited : (43)

References (13)

1
- 84952282825
- Proc. 13th IEEE Photovoltaic Specialists Conference, Washington, D.C.,.
- (1978) , vol.859
- Moon, R.L.¹ James, L.W.² Vanderplas, H.A.³ Yep, T.O.⁴ Antypas, G.A.⁵ Chai, Y.⁶

2
- 84952282850
- Proc. 13th IEEE Photovoltaic Specialists Conference, Washington, D.C.,.
- (1978) , vol.874
- Lamorte, M.J.¹ Abbot, D.²

3
- 84952282851
- 13th IEEE Photovoltaic Specialists Conference, Washington, D.C.,.
- (1978) , vol.886
- Fraas, L.M.¹ Knechtli, R.C.²

4
- 84952282852
- 13th IEEE Photovoltaic Specialists Conference, Washington, D.C.,.
- (1978) , vol.898
- Arienzo, M.¹ Loferski, J.J.²

8
- 84952282853
- Jr., Proc. NASA Solar Cell High Efficiency and Radiation Damage Conference (NASA Conf. Publication 2097),.
- (1979) , vol.283
- Zehr, S.W.¹ Miller, D.L.² Harris, J.S.³

9
- 84952282854
- and Arnaud D’Avitaya, Proc. 8th International Vacuum Congress, Cannes,.
- (1980) , vol.113
- Contour, J.P.¹ Raymond, F.² Verie, C.³

10
- 84952282855
- This annealing was done in an MO‐CVD reactor, and occurred during the growth of [formula omitted] ofn ‐type GaAs from trimethylgallium and arsine over the tunnel juction structure.

13
- 0004005306
- See, e.g., S. M. Sze,(Wiley, New York, ),.
- (1969) Physics of Semiconductor Devices , pp. 31

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.